Self - Organized Si Dots On Ge Substrates

D. Pachinger; H. Lichtenberger und F. Schaeffler

doi:10.1063/1.2729783

Self - Organized Si Dots On Ge Substrates

Materials Science 2009-11-11 v1

Authors: D. Pachinger , H. Lichtenberger und F. Schaeffler

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Abstract

The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying with the substrate occurred for the highest temperatures. Carbon pre-deposition offers suitable nucleation centers for the Si island and reduction of alloying. pre-structured Ge substrates were prepared to enhance islanding and to achieve ordering.

Keywords

silicon physics semiconductor nanowire growth surface science

Cite

@article{arxiv.cond-mat/0608660,
  title  = {Self - Organized Si Dots On Ge Substrates},
  author = {D. Pachinger and H. Lichtenberger und F. Schaeffler},
  journal= {arXiv preprint arXiv:cond-mat/0608660},
  year   = {2009}
}

Comments

presented 26.July 2006 at ICPS 2006 Vienna

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