We report the engineering of air-voids embedded in GaAs-based photonic crystal surface emitting lasers realised by metalorganic vapour-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index planes is exploited in order to increase void volume, leading to an order of magnitude reduction in threshold current and an increase in output power through an increase in the associated grating coupling strength.
@article{arxiv.2011.14837,
title = {Void Engineering in Epitaxially Regrown GaAs-Based Photonic Crystal Surface Emitting Lasers by Grating Profile Design},
author = {Adam F. McKenzie and Ben C. King and Katherine J. Rae and Stephen Thoms and Neil D. Gerrard and Jonathan Orchard and Kenishi Nishi and Keizo Takemasa and Mitsuru Sugawara and Richard J. E. Taylor and David T. D. Childs and Donald A. McLaren and Richard A. Hogg},
journal= {arXiv preprint arXiv:2011.14837},
year = {2021}
}