Related papers: Weak Antilocalization and Spin Precession in Quant…
To establish a correlation between the spin diffusion, the spin lifetime, and the electron density, we study, employing time-resolved magneto-optical Kerr effect microscopy, the spin polarization evolution in low-dimensional GaAs…
Electron spin coherence is induced via light-hole transitions in a quantum well waveguide without either an external or internal DC magnetic field. In the absence of spin precession, the induced spin coherence is detected through effects of…
Artificial confinement of electrons by tailoring the layer thickness has turned out to be a powerful tool to harness control over competing phases in nano-layers of complex oxides. We investigate the effect of dimensionality on transport…
We analyze the effect of weak localization (WL) and weak antilocalization (WAL) in the electronic transport through HgTe/CdTe quantum wells. We show that for increasing Fermi energy the magnetoconductance of a diffusive system with inverted…
The spin dynamics of localized electrons in bulk semiconductors is governed by the interplay of effective nuclear field fluctuations, spin exchange between electrons, and spin transitions into the conduction band. Using spin noise…
Spin dynamics of optically excited electrons confined in asymmetric coupled quantum wells are investigated through time resolved Faraday rotation experiments. The inter-well coupling is shown to depend on applied electric field and barrier…
We report on low temperature (2-30K) electron transport and magneto-transport measurements of a chemically synthesized InAs nanowire. Both the temperature, T, and transverse magnetic field dependences of the nanowire conductance are…
We develop a theory of electron transport through quantum dots that are weakly coupled to ferromagnetic leads. The theory covers both the linear and nonlinear transport regime, takes non-collinear magnetization of the leads into account,…
Spin splitting bands that arises in conduction band minimum (CBM) of WS2 monolayer (ML) play an important role in the new spin-orbit phenomena such as spin-valley coupled electronics. However, application of strain strongly modifies…
We investigate antilocalization due to spin-orbit coupling in ballistic GaAs quantum dots. Antilocalization that is prominent in large dots is suppressed in small dots, as anticipated theoretically. Parallel magnetic fields suppress both…
Combining scattering matrix formalism with non-linear $\sigma$-model technique we analyze weak localization effects in arrays of chaotic quantum dots connected via barriers with arbitrary distribution of channel transmissions. With the aid…
The wave nature of electrons in low-dimensional structures manifests itself in conventional electrical measurements as a quantum correction to the classical conductance. This correction comes from the interference of scattered electrons…
Time-resolved Faraday rotation is used to measure the coherent electron spin precession in a GaAs/InGaAs quantum well below an interdigitated magnetized Fe grating. We show that the electron spin precession frequency can be modified by…
In this letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced effective dimensionality are reported. The non-demolition measurement technique gives access to the otherwise concealed intrinsic, low…
The spin relaxation of a two-dimensional electron system (2DES) formed in a symmetric quantum well is studied theoretically when the quantum well is parallel to the (110) plane of the zinc-blende structure, the spin polarization is…
In this paper the dominant effect of electron inertia on the dynamics of localized density excitations is studied in a quantum plasma in the presence of electron spin effects. Using the quantum magnetohydrodynamics (QMHD) model including…
Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been studied theoretically. Microscopical calculations of valley and spin splittings are performed in the effective $sp^3d^5s^*$ tight-binding model. The splittings…
Strong gate control of proximity-induced spin-orbit coupling was recently predicted in bilayer graphene/transition metal dichalcogenides (BLG/TMDC) heterostructures, as charge carriers can easily be shifted between the two graphene layers,…
The spin-orbit interaction of two-dimensional (2D) electrons in semiconductor quantum wells is usually considered to be determined by the band profile of a heterostructure. In the GaAs/AlGaAs type heterosystems, this interaction consists of…
The results of experimental study of interference induced magnetoconductivity in narrow quantum well HgTe with the normal energy spectrum are presented. Analysis is performed with taking into account the conductivity anisotropy. It is shown…