Related papers: Reflectionless Tunneling Through a Double-Barrier …
Employing an ab initio Screened Korringa-Kohn-Rostoker (SKKR) band structure method for a metal-vacuum-metal junction, we find that the tunnel conductance is different when it is calculated across the barrier and far from it. We attribute…
An explicit expression is obtained for the phase-time corresponding to tunneling of a (non-relativistic) particle through two rectangular barriers, both in the case of resonant and in the case of non-resonant tunneling. It is shown that the…
Based on spin-density functional theory we calculate the electronic structure of a tunnel junction consisting of two magnetic Fe layers separated by an insulating vacuum barrier selfconsistently. For the conductance the Landauer formula is…
We consider a voltage-biased Normal metal-Insulator-Superconductor (NIS) tunnel junction, connected to a high-temperature external electromagnetic environment. This model system features the commonly observed subgap leakage current in NIS…
In the case of tunneling of relativistic particles, differently from the nonrelativistic case, a limit of "transparent" barrier can also lead to an apparent "superluminal" behavior when considering the phase time. In this limit, the…
We investigate the tunneling magnetoresistance (TMR) of a bilayer system made of $X$-wave magnets with $X=p,d,f,g,i$, where $X=d,g,i$ corresponds to altermagnets. A universal analytic formula is derived for the TMR ratio. It is proportional…
Tunneling Magnetoresistance between two ferrromagnets is an issue of fundamental importance in spintronics. In this work, we show that tunneling magnetoresistance can also emerge in junctions composed of ferromagnets and time-reversal…
Oscillatory tunneling magnetoresistance (TMR) as a function of spacer thickness is investigated theoretically for a magnetic tunnel junction with a nonmagnetic layer inserted between the tunnel barrier and the ferromagnetic layer. TMR is…
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS…
We investigate a normal metal -- superconductor (point) contact in the limit where the number of conducting channels in the metallic wire is reduced to few channels. As the effective Fermi energy drops below the gap energy, a conducting…
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…
We study theoretically electronic transport through a normal metal-- superconductor (NS) interface and show that more than one conductance may be defined, depending on the pair of chemical potentials whose difference one chooses to relate…
The resistance between arbitrary two nodes in a resistor network is obtained in terms of the eigenvalues and eigenfunctions of the Laplacian matrix associated with the network. Explicit formulas for two-point resistances are deduced for…
Point contact junctions made from two pieces of MgB2 can be adjusted to exhibit either superconductor-insulator-superconductor (SIS) or superconductor-normal metal-superconductor (SNS) current-voltage characteristics. The SIS…
It is well established that the subgap conductivity through a normal-metal-insulator-superconductor (NIS) tunnel junction is strongly affected by interference of electron waves scattered by impurities. In this paper we investigate how the…
We calculate the junction resistance for a metal-barrier-metal device with the barrier tuned to lie just on the insulating side of the metal-insulator transition. We find that the crossover from tunneling behavior in thin barriers at low…
In order to clarify the influence of (the presence of) the broken time-reversal symmetry state (BTRSS) induced near the interface, tunneling conductance spectra in normal metal / $d_{x^{2}-y^{2}}$-wave superconductor junctions are…
Tunneling spectroscopy of InAs nanocrystals deposited on graphite was measured using scanning tunneling microscopy, in a double-barrier tunnel-junction configuration. The effect of the junction symmetry on the tunneling spectra is studied…
We study the conduction of a {\sl N~-~Sm~-~S} junction, where {\sl Sm} is a strongly disordered semiconductor. The differential conductance $dI/dV$ of this {\sl N~-~Sm~-~S} structure is predicted to have a sharp peak at $V=0$. Unlike the…
We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were…