Related papers: Reflectionless Tunneling Through a Double-Barrier …
The current-voltage characteristics of Au/InOx/Pb tunnel junctions exhibit peculiar zero-bias anomalies. At low temperature the zero-bias resistance attains values that are smaller than the normal state resistance by a factor that often…
Quantum mechanics predicts an exponentially small probability that a particle with energy greater than the height of a potential barrier will nevertheless reflect from the barrier in violation of classical expectations. This process can be…
At low temperatures, the transport through a superconducting-normal tunnel interface is due to tunneling of electrons in pairs. The probability for this process is shown to depend on the layout of the electrodes near the tunnel junction,…
We consider a normal metal - superconductor (N-S) junction in the regime, when electrons in the normal metal are driven out of equilibrium. We show that the non-equilibrium fluctuations of the electron density in the N-layer cause the…
We report on the successful fabrication of low leakage aluminium superconducting tunnel junctions with very homogeneous and transparent insulating barriers. The junctions were tested in an adiabatic demagnetisation refrigerator with a base…
We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the…
Contact resistance and current crowding are important to nanoscale electrical contacts. In this paper, we present a self-consistent model to characterize partially overlapped parallel contacts with varying specific contact resistivity along…
We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgO buffered Si (100). Tunnel magnetoresistance reached up to 64% at 4.2 K. An unexpected fast drop of magnetoresistance was recorded for MgO thickness above 1 nm, which is…
The resonant tunneling model is the simplest model for describing electronic transport through nanoscale objects like individual molecules. A complete understanding includes not only charge transport but also thermal transport and their…
Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriers are prepared to examine their stability under large current stress. The devices show magnetoresistance ratios of up to 110 % and an area resistance product of down…
The conductance fluctuations of a metallic wire which is interrupted by a small tunnel junction has been explored experimentally. In this system, the bias voltage V, which drops almost completely inside the tunnel barrier, is used to probe…
A quantum statistical theory of spin-dependent tunneling through asymmetric magnetic double barrier junctions is presented which describes $both$ ballistic and diffuse tunneling by a single analytical expression. It is evidenced that the…
We investigate the conductance of normal-conductor/graphene/normal-conductor (NGN) junctions for arbitrary on-site potentials in the normal and graphitic parts of the system. We find that a ballistic NGN junction can display insulating…
Superconductor-insulator-superconductor tunnel junctions have been fabricated on MgB2 that display Josephson and quasiparticle currents. These junctions exhibit a gap magnitude, Delta~2.5 meV, that is considerably smaller than the BCS…
An explicit formula for the resistance between two nodes in a network with a non-symmetric Laplacian matrix L is obtained. This is of great advantage e.g. in electronic circuit fault analysis, where non-linear systems have to be solved…
We calculate the conductance through double junctions of the type M(inf.)-Sn-Mm-Sn-M(inf.) and triple junctions of the type M(inf.)-Sn-Mm-Sn-Mm-Sn-M(inf.), where M(inf.) are semi-infinite metallic electrodes, Sn are 'n' layers of…
The resistive switching phenomenon in MgO-based tunnel junctions is attributed to the effect of charged defects inside the barrier. The presence of electron traps in the MgO barrier, that can be filled and emptied, locally modifies the…
We consider a superconductor-insulator-superconductor (SIS) junction in which the tunnelling through the insulating barrier is dominated by a localized ``negative U'' center. We show that the $I_{c}R$ product of the junction depends…
We have developed a technique to fabricate sub-micron, 0.6 um x 0.6 um Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as…
We study theoretically the current-noise energy dependence for a N-N'-S structure, where N and S stand for bulk normal metal and superconductor, respectively, and N' for a short diffusive normal metal. Using quasiclassical theory of current…