Related papers: Reflectionless Tunneling Through a Double-Barrier …
We investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex-situ tunnel barrier is formed by oxidation of the…
We analyze the temperature dependence of conductivity in thick granular ferromagnetic compounds NiSiO2 and in thin weakly coupled films of Fe, Ni and Py in vicinity of metal-insulator transition. Development of resistivity minimum followed…
We carry out a layer-by-layer investigation to understand electron transport across metal-insulator-metal junctions. Interfacial structures of junctions were studied and characterized using first-principles density functional theory within…
We revisit the Coulomb blockade of the tunnel junction with conductance much smaller than $e^2/\hbar$. We study the junction with capacitance $C$, embedded in an Ohmic electromagnetic environment modelled by a series resistance $R$ which…
It is shown that the conductance of a superconductor-normal metal-superconductor junction can exhibit a significant dependence on the phase of the superconducting order parameter in the situation when the size of the normal region of the…
We describe transport properties of two-dimensional arrays of low capacitance tunnel junctions, such as the current voltage characteristic and its dependence on external magnetic field and temperature. We discuss several experiments in…
We investigate the current-voltage characteristics of high-transparency superconductor-insulator-normal metal (SIN) junctions with the specific tunnel resistance below 30 kOhm per square micron. The junctions were fabricated from different…
We report transport measurements down to T=60mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junctions. For the first time, a zero bias anomaly was observed…
We consider the effect of disorder on coherent tunneling through two barriers in series, in the regime of overlapping transmission resonances. We present analytical calculations (using random-matrix theory) and numerical simulations (on a…
We have calculated current-voltage characteristic curves for normal-superconducting junctions with Andreev reflections and different types of electronic bands. We found that when the normal band is narrow, of the order of the…
We calculate the tunneling conductance spectra of a normal metal / insulator / triplet superconductor from the reflection amplitudes using the Blonder-Tinkham-Klapwijk (BTK) formula. For the triplet superconductor we assume one special…
Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at $\nu_T=1$ are reported. The maximum, or critical current for tunneling at $\nu_T=1$, is shown to be a well-defined global property of the coherent…
On a microscopic scale, resistivity during electric conduction is caused by collisions of the free conduction electrons with the obstructing atoms or molecules of the conductor material, resulting in heat production. Based on this…
We have applied the Numerical Renormalization Group method to study a mesoscopic system consisting of two samples of metal separated by an insulating barrier, with nanometer dimensions, which allows the tunnelling of a single electron from…
Coherent spin-dependent electronic transport is investigated in a molecular junction made of polymeric chain attached to ferromagnetic electrodes (Ni and Co, respectively). Molecular system is described by a simple Huckel model, while the…
The incoherent regime of Multiple Andreev Reflections (MAR) is studied in long diffusive SNS junctions at applied voltages larger than the Thouless energy. Incoherent MAR is treated as a transport problem in energy space by means of a…
We have successfully fabricated micron-scale Cu-AlO$_{x} $-Al-NbN normal metal-insulator-superconductor (NIS) tunnel junction devices, using pulsed laser deposition (PLD) for NbN film growth, and electron-beam lithography and shadow…
A general formula for the current through a disordered normal--superconducting junction is derived, which is valid at finite temperature and includes the full voltage dependence. The result depends on a multichannel scattering matrix, which…
The apparently unrelated experimental observations of optical sum rule violation[1] and of tunneling asymmetry in NIS tunneling[2] find a simple explanation within the theory of hole superconductivity. In fact, both phenomena were predicted…
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the…