Related papers: Reflectionless Tunneling Through a Double-Barrier …
To test the quality of a tunnel junction, one sometimes fits the bias-dependent differential conductance to a theoretical model, such as Simmons's formula. Recent experimental work by {\AA}kerman and collaborators, however, has demonstrated…
Tunneling conductance in diffusive normal metal / insulator / s-wave superconductor (DN/I/S) junctions is calculated for various situations by changing the magnitudes of the resistance and Thouless energy in DN and the transparency of the…
In this paper we analyze different contributions to the magnetoresistance of magnetic tunneling junctions at low voltages. A substantial fraction of the resistance drop with voltage can be ascribed to variations of the density of states and…
We investigate one dimensional models (the Blonder, Tinkham, Klapwijk model and a tight-binding model) of non local transport at normal metal / superconductor (NS) double interfaces. We find a negative elastic cotunneling crossed…
We investigate the electrical and thermal transport properties of the $\alpha-T_3$ based normal metal-insulator-superconductor (NIS) junction using Blonder-Tinkham-Klapwijk (BTK) theory. We show that the tunneling conductance of the NIS…
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions…
A vast class of disordered conducting-insulating compounds close to the percolation threshold is characterized by nonuniversal values of transport critical exponent t, in disagreement with the standard theory of percolation which predicts t…
The dependence of tunneling conductance and tunneling magnetoresistance (TMR) on barrier thickness in magnetic tunnel junctions is theoretically investigated. The complex band structure of the insulator is taken into account, and an…
We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and…
Phase- and voltage bias-sensitive quasiparticle transport at a double $NIS_1IS_2$ interface is considered. The barriers $I$ range from tunnel to transparent, and the intermediate region $S_1$ has a width comparable to the superconducting…
Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 {\Omega} cm2. The design methodology and low-temperature characteristic of…
The Andreev current through an ultrasmall NIS junction is calculated in a systematic way by means of a nonlinear response approach basing on the elementary Hamiltonian of quasiparticle tunneling. The voltage dependence of current and…
We study transport across ballistic junctions of materials which host pseudospin-one fermions as emergent low-energy quasiparticles. The effective low-energy Hamiltonians of such fermions are described by integer spin Weyl models. We show…
Tunneling data on magnesium diboride, MgB_2, are reviewed with a particular focus on superconductor-insulator-superconductor (SIS) junctions formed by a break-junction method. The collective tunneling literature reveals two distinct energy…
We show that SIS Josephson junctions have a threshold resistance, above which the Josephson coupling and the supercurrents become extremely small, due to the shrinking of the Cooper pair size during the Josephson tunneling. Accordingly, the…
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
Recent studies of the tunnelling through two opaque barriers claim that the transit time is independent of the barrier widths and of the separation distance between the barriers. We observe, in contrast, that if multiple reflections are…
A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical…
We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron…
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…