Dynamic Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions
Materials Science
2007-09-25 v1 Other Condensed Matter
Abstract
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions oscillates with an applied voltage when electrons that tunnel directly into the barrier's conduction band interfere upon reflection at the classical turning points: the insulator-metal interface, and the dynamic point where the incident electron energy equals the potential barrier inside the insulator. A model of tunneling between free electron bands using the exact solution of the Schroedinger equation for a trapezoidal tunnel barrier qualitatively agrees with experiment.
Cite
@article{arxiv.0709.3556,
title = {Dynamic Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions},
author = {Casey W. Miller and Zhi-Pan Li and Ivan K. Schuller and R. W. Dave and J. M. Slaughter and Johan Akerman},
journal= {arXiv preprint arXiv:0709.3556},
year = {2007}
}
Comments
4pgs, 3 figs