Crossover from tunneling to incoherent (bulk) transport in a correlated nanostructure
Strongly Correlated Electrons
2009-11-10 v1
Abstract
We calculate the junction resistance for a metal-barrier-metal device with the barrier tuned to lie just on the insulating side of the metal-insulator transition. We find that the crossover from tunneling behavior in thin barriers at low temperature to incoherent transport in thick barriers at higher temperature is governed by a generalized Thouless energy. The crossover temperature can be estimated from the low temperature resistance of the device and the bulk density of states of the barrier.
Cite
@article{arxiv.cond-mat/0401100,
title = {Crossover from tunneling to incoherent (bulk) transport in a correlated nanostructure},
author = {J. K. Freericks},
journal= {arXiv preprint arXiv:cond-mat/0401100},
year = {2009}
}
Comments
4 pages, 3 figures, to appear in Applied Physics Letters