Related papers: Quantum Hall effect at cleaved InSb surfaces and l…
We have studied the tunneling properties of GaSb/AlSb/InAs/AlSb/GaSb heterostructures, in which electrons and holes accumulate in the InAs and GaSb regions respectively, under a magnetic field parallel to the interfaces. The low-temperature…
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39.5 m2V-1s-1 with carrier densities between 1.5x1015 and…
Magnetic topological insulators can host chiral 1D edge channels at zero magnetic field, when a magnetic gap opens at the Dirac point in the band structure of 2D topological surface states, leading to the quantum anomalous Hall effect in…
Magnetic transitions in AlAs two-dimensional electrons give rise to sharp resistance spikes within the quantum Hall effect. Such spikes are likely caused by carrier scattering at magnetic domain walls below the Curie temperature. We report…
We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both…
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external…
We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical…
In layered samples which exhibit a bulk quantum Hall effect (QHE), a two-dimensional (2d) surface ``sheath" of gapless excitations is expected. These excitations comprise a novel 2d chiral quantum liquid which should dominate the low…
We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic…
Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degeneracy with a valley splitting <= 0.1 K. The zero-field…
The large magnetic anisotropy in the layered ferromagnet Fe_{1/4}TaS_2 leads to very sharp reversals of the magnetization $\bf M$ at the coercive field. We have exploited this feature to measure the anomalous Hall effect (AHE), focussing on…
A two-dimensional array of quantum dots in a magnetic field is considered. The electrons in the quantum dots are described as unitary random matrix ensembles. The strength of the magnetic field is such that there is half a flux quantum per…
Universality of the extraordinary Hall effect scaling was tested in granular three-dimensional Ni-SiO2 films across the metal-insulator transition. Three types of magnetotransport behavior have been identified: metallic, weakly insulating…
The effect of a DC electric field on the longitudinal resistance of highly mobile two dimensional electrons in heavily doped GaAs quantum wells is studied at different magnetic fields and temperatures. Strong suppression of the resistance…
In high-quality solid-state systems at low temperatures, the hydrodynamic or the ballistic regimes of heat and charge transport are realized in the electron and the phonon systems. In these regimes, the thermal and the electric conductance…
The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of…
Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements reveal an unusual behavior in the transition regime from n- to…
We report the first experimental observation of magnetic-field-induced quantized charge accumulation in a quantum anomalous Hall (QAH) system -- a phenomenon originating from the intrinsic two-dimensional surface state and fundamentally…
The low-field quantum Hall effect is investigated on a two-dimensional electron system in an AlGaAs/GaAs heterostructure. Magneto-oscillations following the semiclassical Shubnikov-de Haas formula are observed even when the emergence of the…
We present a study on the magnetization, anomalous Hall effect (AHE) and novel longitudinal resistivity in layered antiferromagnet Co$_{0.29}$TaS$_{2}$. Of particular interests in Co$_{0.29}$TaS$_{2}$ are abundant magnetic transitions,…