Magnetotransport measurements are presented on paramagnetic (Hg,Mn)Te quantum wells (QWs) with an inverted band structure. Gate-voltage controlled density dependent measurements reveal an unusual behavior in the transition regime from n- to p-type conductance: A very small magnetic field of approximately 70 mT is sufficient to induce a transition into the nu = -1 quantum Hall state, which extends up to at least 10 Tesla. The onset field value remains constant for a unexpectedly wide gate-voltage range. Based on temperature and angle-dependent magnetic field measurements we show that the unusual behavior results from the realization of the quantum anomalous Hall state in these magnetically doped QWs.
@article{arxiv.1706.05789,
title = {Quantum anomalous Hall effect in Mn doped HgTe quantum wells},
author = {A. Budewitz and K. Bendias and P. Leubner and T. Khouri and S. Shamim and S. Wiedmann and H. Buhmann and L. W. Molenkamp},
journal= {arXiv preprint arXiv:1706.05789},
year = {2017}
}