Reentrant topological phases in Mn-doped HgTe quantum wells

W. Beugeling; C. X. Liu; E. G. Novik; L. W. Molenkamp; C. Morais Smith

doi:10.1103/PhysRevB.85.195304

Reentrant topological phases in Mn-doped HgTe quantum wells

Mesoscale and Nanoscale Physics 2012-05-07 v1

Authors: W. Beugeling , C. X. Liu , E. G. Novik , L. W. Molenkamp , C. Morais Smith

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Abstract

Quantum wells of HgTe doped with Mn display the quantum anomalous Hall effect due to the magnetic moments of the Mn ions. In the presence of a magnetic field, these magnetic moments induce an effective nonlinear Zeeman effect, causing a nonmonotonic bending of the Landau levels. As a consequence, the quantized (spin) Hall conductivity exhibits a reentrant behavior as one increases the magnetic field. Here, we will discuss the appearance of different types of reentrant behavior as a function of Mn concentration, well thickness, and temperature, based on the qualitative form of the Landau-level spectrum in an effective four-band model.

Keywords

reentrant topological phases Mn-doped HgTe quantum wells quantum anomalous Hall effect nonlinear Zeeman effect Landau levels spin Hall conductivity four-band model

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@article{arxiv.1203.1491,
  title  = {Reentrant topological phases in Mn-doped HgTe quantum wells},
  author = {W. Beugeling and C. X. Liu and E. G. Novik and L. W. Molenkamp and C. Morais Smith},
  journal= {arXiv preprint arXiv:1203.1491},
  year   = {2012}
}

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8 pages, 3 figures

Reentrant topological phases in Mn-doped HgTe quantum wells

Abstract

Keywords

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