Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface
Mesoscale and Nanoscale Physics
2009-10-26 v2 Strongly Correlated Electrons
Abstract
Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degeneracy with a valley splitting <= 0.1 K. The zero-field resistivity rho_{xx} displays strong temperature dependence for 0.07 < T < 25 K as predicted for a system with high degeneracy and large mass. We present a method for using the low-field Hall coefficient to probe intervalley momentum transfer (valley drag). The relaxation rate is consistent with Fermi liquid theory, but a small residual drag as T->0 remains unexplained.
Cite
@article{arxiv.0903.1862,
title = {Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface},
author = {Robert N. McFarland and Tomasz M. Kott and Luyan Sun and K. Eng and B. E. Kane},
journal= {arXiv preprint arXiv:0903.1862},
year = {2009}
}
Comments
5 pages, 4 figures; revised and slightly shortened for publication;