Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be non-monotonic with a maximum at temperatures Tm~0.16Tf. The Rxy(T) variations in the low-temperature domain (T<Tm) agree qualitatively with the semiclassical model, that takes into account a broadening of the Fermi-distribution solely. The semiclassical result considerably exceeds an interaction-induced quantum correction. In the ``high-temperature'' domain (T>Tm), the Rxy(T) dependence can be qualitatively explained in terms of either a semiclassical T-dependence of a transport time, or a thermal activation of carries from a localized band.
@article{arxiv.cond-mat/0504475,
title = {Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si},
author = {A. Yu. Kuntsevich and D. A. Knyazev and V. I. Kozub and V. M. Pudalov and G. Brunhaler and G. Bauer},
journal= {arXiv preprint arXiv:cond-mat/0504475},
year = {2009}
}