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Related papers: A Graphene Field-Effect Device

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We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomena is modeled using a modified Poisson-Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the…

Mesoscale and Nanoscale Physics · Physics 2010-06-10 Z. L. Miskovic , N. Upadhyaya

We experimentally demonstrate graphene-plasmon polariton excitation in a continuous graphene monolayer resting on a two-dimensional subwavelength silicon grating. The subwavelength silicon grating is fabricated by a nanosphere lithography…

Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the…

Mesoscale and Nanoscale Physics · Physics 2012-09-25 Alina Veligura , Paul J. Zomer , Ivan J. Vera-Marun , Csaba Józsa , Pavlo I. Gordiichuk , Bart J. van Wees

Graphene - a single atomic layer of graphite - is a recently-found two-dimensional form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft magnetic NiFe electrodes have been used to…

Mesoscale and Nanoscale Physics · Physics 2019-08-19 E. W. Hill , A. K. Geim , K. Novoselov , F. Schedin , P. Blake

Graphene can support surface plasmons with higher confinement, lower propagation loss, and substantially more tunable response compared to usual metal-based plasmonic structures. Interestingly, plasmons in graphene can strongly couple with…

Optics · Physics 2023-08-03 Tianjing Guo , Christos Argyropoulos

We present density functional theory calculations of the phonon-limited mobility in n-type monolayer graphene, silicene and MoS$_2$. The material properties, including the electron-phonon interaction, are calculated from first-principles.…

Mesoscale and Nanoscale Physics · Physics 2016-01-13 Tue Gunst , Troels Markussen , Kurt Stokbro , Mads Brandbyge

Graphene is known to have small intrinsic spin-orbit Interaction (SOI). In this review, we demonstrate that SOIs in graphene can be strongly enhanced by proximity effect when graphene is deposited on the top of transition metal…

Mesoscale and Nanoscale Physics · Physics 2021-12-16 Taro Wakamura , Sophie Guéron , Hélène Bouchiat

Graphene has been used recently as a replacement for indium tin oxide (ITO) for the transparent electrode of an organic photovoltaic device. Due to its limited supply, ITO is considered as a limiting factor for the commercialization of…

We draw motivation from recent experimental studies and present a comprehensive study of magnetothermoelectric transport in a graphene monolayer within the linear response regime. We employ the modified Kubo formalism developed for thermal…

Mesoscale and Nanoscale Physics · Physics 2015-05-27 R. Nasir , K. Sabeeh

We propose a general theory for the analytical description of versatile hysteretic phenomena in a graphene field effect transistor (GFET) allowing for the existence of the external dipoles on graphene free surface and the localized states…

Mesoscale and Nanoscale Physics · Physics 2017-09-13 Anatolii I. Kurchak , Anna N. Morozovska , Maksym V. Strikha

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically…

Materials Science · Physics 2009-11-10 V. Podzorov , M. E. Gershenson , Ch. Kloc , R. Zeis , E. Bucher

We have developed the combination of an etching and deposition technique that enables the fabrication of locally gated graphene nanostructures of arbitrary design. Employing this method, we have fabricated graphene nanoconstrictions with…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Barbaros Özyilmaz , Pablo Jarillo-Herrero , Dmitri Efetov , Philip Kim

Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR)…

Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high…

Inelastic phonon scattering in graphene field-effect transistors (FETs) is studied by numerically solving the Boltzmann transport equation in three dimensional real and phase spaces (x, kx, ky). A kink behavior due to ambipolar transport…

Mesoscale and Nanoscale Physics · Physics 2015-05-27 Jyotsna Chauhan , Jing Guo

Charge-coupled device (CCD), along with the complementary metal-oxide-semiconductor (CMOS), is one of the major imaging technologies. Traditional CCDs rely on the charge transfer between potential wells, which gives them advantages of…

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the…

Mesoscale and Nanoscale Physics · Physics 2015-09-23 K. Bennaceur , B. A. Schmidt , S. Gaucher , D. Laroche , M. P. Lilly , J. L. Reno , K. W. West , L. N. Pfeiffer , G. Gervais

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other…

Combining the electronic structures of two-dimensional monolayers in ultrathin hybrid nanocomposites is expected to display new properties beyond their simplex components. Here, first-principles calculations are performed to study the…

Materials Science · Physics 2015-05-15 Wei Hu , Tian Wang , Jinlong Yang

In this paper, we demonstrate by simulation the general usability of an electrostatically doped and electrically reconfigurable planar field-effect transistor (FET) structure. The device concept is partly based on our already published and…

Materials Science · Physics 2014-05-30 Tillmann Krauss , Frank Wessely , Udo Schwalke
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