Hysteresis and commonly observed p-doping of graphene based field effect transistors (FET) was already discussed in reports over last few years. However, the interpretation of experimental works differs; and the mechanism behind the appearance of the hysteresis and the role of charge transfer between graphene and its environment are not clarified yet. We analyze the relation between electrochemical and electronic properties of graphene FET in moist environment extracted from the standard back gate dependence of the graphene resistance. We argue that graphene based FET on a regular SiO2 substrate exhibits behavior that corresponds to electrochemically induced hysteresis in ambient conditions, and can be caused by charge trapping mechanism associated with sensitivity of graphene to the local pH.
@article{arxiv.1110.1541,
title = {Relating Hysteresis and Electrochemistry in Graphene Field Effect Transistors},
author = {Alina Veligura and Paul J. Zomer and Ivan J. Vera-Marun and Csaba Józsa and Pavlo I. Gordiichuk and Bart J. van Wees},
journal= {arXiv preprint arXiv:1110.1541},
year = {2012}
}