Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface

Mohammed Humed Yusuf; Bent Nielsen; Matthew Dawber; Xu Du

doi:10.1021/nl502669v

Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface

Mesoscale and Nanoscale Physics 2014-08-27 v1 Materials Science

Authors: Mohammed Humed Yusuf , Bent Nielsen , Matthew Dawber , Xu Du

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Abstract

The interface between graphene and the ferroelectric superlattice $\mathrm{PbTiO_3/SrTiO_3}$ (PTO/STO) is studied. Tuning the transition temperature through the PTO/STO volume fraction minimizes the adsorbates at the graphene-ferroelectric interface, allowing robust ferroelectric hysteresis to be demonstrated. Intrinsic charge traps from the ferroelectric surface defects can adversely affect the graphene channel hysteresis, and can be controlled by careful sample processing, enabling systematic study of the charge trapping mechanism.

Keywords

graphene ferroelectric superlattice charge trapping hysteresis interface defects PbTiO3/SrTiO3

Cite

@article{arxiv.1408.6169,
  title  = {Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface},
  author = {Mohammed Humed Yusuf and Bent Nielsen and Matthew Dawber and Xu Du},
  journal= {arXiv preprint arXiv:1408.6169},
  year   = {2014}
}

Comments

25 pages, 5 figures. Published online in Nano letters, Article ASAP, August 18, 2014, http://pubs.acs.org/doi/abs/10.1021/nl502669v

Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface

Abstract

Keywords

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