Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ interface

A. Sawa; T. Fujii; M. Kawasaki; Y. Tokura

doi:10.1063/1.1812580

Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ interface

Materials Science 2009-11-10 v1 Strongly Correlated Electrons

Authors: A. Sawa , T. Fujii , M. Kawasaki , Y. Tokura

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Abstract

We have characterized the vertical transport properties of epitaxial layered structures composed of Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ (PCMO) sandwiched between SrRuO $_{3}$ (SRO) bottom electrode and several kinds of top electrodes such as SRO, Pt, Au, Ag, and Ti. Among the layered structures, Ti/PCMO/SRO is distinct due to a rectifying current-voltage ( $I$ -- $V$ ) characteristic with a large hysteresis. Corresponding to the hysteresis of the $I$ -- $V$ characteristics, the contact resistance of the Ti/PCMO interface reversibly switches between two stable states by applying pulsed voltage stress. We propose a model for the resistance switching at the Ti/PCMO interface, in which the width and/or height of a Schottky-like barrier are altered by trapped charge carriers in the interface states.

Keywords

current-voltage characteristics resistance switching Ti/PCMO interface hysteresis Schottky barrier

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@article{arxiv.cond-mat/0409657,
  title  = {Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ interface},
  author = {A. Sawa and T. Fujii and M. Kawasaki and Y. Tokura},
  journal= {arXiv preprint arXiv:cond-mat/0409657},
  year   = {2009}
}

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3 pages, 4 figures, Appl. Phys. Lett., in press

Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr$_{0.7}$Ca$_{0.3}$MnO$_{3}$ interface

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