Related papers: Field-effect transistors assembled from functional…
Full Adder is one of the critical parts of logical and arithmetic units. So, presenting a low power full adder cell reduces the power consumption of the entire circuit. Also, using Nano-scale transistors, because of their unique…
Carbon nanotube field-effect transistors with sub 20 nm long channels and on/off current ratios of > 1000000 are demonstrated. Individual single-walled carbon nanotubes with diameters ranging from 0.7 nm to 1.1 nm grown from structured…
We propose a device which implements a solid-state nanostructured electron entangler. It consists of a single-walled carbon nanotube connected at both end to normal state electrodes and coupled in its middle part to a superconducting…
We report a bipolar field effect tunneling transistor that exploits to advantage the low density of states in graphene and its one atomic layer thickness. Our proof-of-concept devices are graphene heterostructures with atomically thin boron…
Silicene (a monolayer of silicon atoms) is a quantum spin-Hall insulator, which undergoes a topological phase transition into other insulators by applying external field such as electric field, photo-irradiation and antiferromagnetic order.…
We demonstrate the realization of an electrically-driven integrated source of surface plasmon polaritons. Light-emitting individual single-walled carbon nanotube field effect transistors were fabricated in a plasmonic-ready platform. The…
Colloidally synthesized nanomaterials are among the promising candidates for future electronic devices due to their simplicity and the inexpensiveness of their production. Specifically, colloidal nanosheets are of great interest since they…
In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices,…
A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to…
Carbon nanotubes bridge the molecular and crystalline quantum worlds, and their extraordinary electronic, mechanical and optical properties have attracted enormous attention from a broad scientific community. We review the basic principles…
Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3…
The interaction and tunneling conductance between oppositely located ends of coaxial carbon nanotubes are studied by the example of two (11,11) nanotubes with open ends terminated by hydrogen atoms. The Green function formalism is applied…
Carbon nanotubes with their outstanding electrical and mechanical properties are suggested as interconnect material of the future and as switching devices, which could outperform silicon devices. In this paper we will introduce nanotubes,…
We demonstrate, for the first time, the large electromechanical response in nematic liquid crystalline elastomers filled with a very low (~0.01%) concentration of carbon nanotubes, aligned along the nematic director at preparation. The…
With decreasing device dimensions, the performance of carbon nanotube field-effect transistors (CNFETs) is limited by high Off currents except at low drain voltages. We show that an asymmetric design improves the performance, reducing Off…
The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional…
We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the…
Inspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFET's and the recent attention to charge doping in carbon-based materials, we have made attempts to fabricate a field-effect transistor…
Nanosized energy storage, energy-harvesting, and functional devices are the three key components for integrated self-power systems. Here, we report on nanoscale electrochemical devices with a nearly three-fold enhanced stored charge under…
As the dimensions of electronic devices approach those of molecules, the size, geometry and chemical composition of the contact electrodes play increasingly dominant roles in device functions. It is shown here that single-walled carbon…