Related papers: Transport properties of two-dimensional electron s…
Motivated by interesting recent experimental results, we consider theoretically charged-impurity scattering-limited 2D electronic transport in (100), (110), and (111)-Si inversion layers at low temperatures and carrier densities, where…
Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degeneracy with a valley splitting <= 0.1 K. The zero-field…
We have fabricated and characterized a field-effect transistor in which an electric field is applied through an encapsulated vacuum cavity and induces a two-dimensional electron system on a hydrogen-passivated Si(111) surface. This vacuum…
We investigate theoretically 2D electronic transport in Si:P $\delta$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows…
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…
The charge-carrier transport properties of ultrathin metallic films are analysed with ab-initio methods using the density functional theory (DFT) on free-standing single crystalline slabs in the thickness range between 1 and 8 monolayers…
Undoped Si-SiGe two-dimensional electron gas (2DEG) provide an ideal platform for hosting quantum-dot spin-qubits owing enhanced spin dephasing times and compatibility with standard CMOS technology. The strained Si quantum well reduces the…
Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different…
Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs) thanks to their unique mechanical properties and enhanced electrostatic control. However, the performance of these…
We report experiment and theory on an ambipolar gate-controlled Si-vacuum field effect transistor (FET) where we study electron and hole (low-temperature 2D) transport in the same device simply by changing the external gate voltage to tune…
We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the…
Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, hold promises for device miniaturization down to atomic…
A comparative analysis of experimental data on electron transport in Si (100) MOSFETs in the region of high mobilities and strong electronelectron interaction is carried out. It is shown that electrons can be described by the model of a…
In recent years systematic experimental studies of the temperature dependence of the resistivity in a variety of dilute, ultra clean two dimensional electron/hole systems have revived the fundamental question of localization or,…
Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the estimated impurity density is too low in order…
We report on systematic study of transport properties of a 1000-nm HgTe film. Unlike to thinner and strained HgTe films, which are known as high-quality three-dimensional (3D) topological insulators, the film under study is much thicker…
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing…
We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and…
We have considered the conductivity properties of a two dimensional electron gas (2DEG) in two different kinds of inhomogeneous magnetic fields, i.e. a disordered distribution of magnetic flux vortices, and a periodic array of magnetic flux…
Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large…