Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems
Abstract
Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.
Keywords
Cite
@article{arxiv.0811.1937,
title = {Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems},
author = {I. Knezevic and E. B. Ramayya and D. Vasileska and S. M. Goodnick},
journal= {arXiv preprint arXiv:0811.1937},
year = {2009}
}
Comments
Review article, to appear in Journal of Computational and Theoretical Nanoscience