Related papers: Performance of a spin-based insulated gate field e…
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin…
The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional…
The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors is now possible, the realization of a functional spin field…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…
We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range…
Funtionalized pentacene, 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors(FET's) were made by thermal evaporation or solution deposition method and the mobility was measured as a function of temperature…
It is well known that conventional Field Effect Transistors (FET's) require a change in the channel potential of at least 60 mV at 300K to effect a change in the current by a factor of ten, and this minimum subthreshold slope S puts a lower…
We extend the analogy between charge-based bipolar semiconductor electronics and spin-based unipolar electronics by considering unipolar spin transistors with different equilibrium spin splittings in the emitter, base, and collector. The…
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of…
Champions of spintronics often claim that spin based signal processing devices will vastly increase speed and/or reduce power dissipation compared to traditional charge based electronic devices. Yet, not a single spintronic device exists…
We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…
Recent experiments have demonstrated that the performances of organic FETs strongly depend on the dielectric properties of the gate insulator. In particular, it has been shown that the temperature dependence of the mobility evolves from a…
We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has…
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…
The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the…
Field-effect transistors based on band-to-band tunneling (BTBT) have gained a lot of recent interest due to their potential for reducing power dissipation in integrated circuits. In this paper we present a detailed performance comparison…
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…
In this paper, we have presented the impact of the gate leakage through thin gate dielectrics (SiO2 and high-\k{appa} gate dielectric) on the subthreshold characteristics of the tunnel field effect transistors (TFET) for a low operating…