Related papers: Performance of a spin-based insulated gate field e…
Spin transistors and spin Hall effects have been two separate leading directions of research in semiconductor spintronics which seeks new paradigms for information processing technologies. We have brought the two directions together to…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
We studied the spin-dependent quantum transport properties using a simple modelling of a Datta-Das spin transistor. We refine previous results by accounting the propagation medium changes of opacity felt by itinerant electrons, when the…
Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…
We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…
Metallic nanoparticles offer possibilities to build basic electric devices with new functionality and improved performance. Due to the small volume and the resulting low self-capacitance, each single nanoparticle exhibits a high charging…
In magnetic topological insulators, quantized electronic transport is interwined with spontaneous magnetic ordering, as magnetization controls band gaps, hence band topology, through the exchange interaction. We show that considering the…
Transport properties of ferromagnetic/non-magnetic/ferromagnetic single electron transistors are investigated as a function of external magnetic field, temperature, bias and gate voltage. By designing the magnetic electrodes to have…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used,…
We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The…
Spin-orbit torque provides an efficient pathway to manipulate the magnetic state and magnetization dynamics of magnetic materials, which is crucial for energy-efficient operation of a variety of spintronic devices such as magnetic memory,…
Thermoelectric devices at the nanoscale offer promising routes for on-chip refrigeration and waste-heat recovery, yet most semiconductor-based implementations suffer from limited tunability and narrow operational ranges. We introduce a…
We theoretically investigate spin dependent transport in ferromagnetic/normal metal/ferromagnetic single electron transistors by applying master equation calculations using a two dimensional space of states involving spin and charge degrees…
Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant limitations as device scaling reaches the limits of Moore's Law. These…
It is known that the quantum-mechanical ground state of a nano-scale junction has a significant impact on its electrical transport properties. This becomes particularly important in transistors consisting of a single molecule. Due to strong…
The current theoretical and experimental situations are reviewed for low-dimensional insulating systems with a low magnetic transition temperature TM and pronounced short-range magnetic order above this temperature. Both the standard and…