Related papers: Electrical Detection of Spin Accumulation at a Fer…
We study the effects of spin accumulation (inside reservoirs) on electronic transport with tunneling and reflections at the gates of a quantum dot. Within the stub model, the calculation focus on the current-current correlation function for…
Reverse-biased graphene (Gr)/semiconductor Schottky diodes exhibit much enhanced sensitivity for gas sensing. However, carrier transport across the junctions is not fully understood yet. Here, Gr/SiC, Gr/GaAs and Gr/Si Schottky junctions…
Charge-to-spin conversion in various material systems is the key for the fundamental understanding of spin-orbitronis as well as the development of efficient means to manipulate the magnetization. We report the direct spatial imaging of…
We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…
Spin transport in electric conductors is largely determined by two material parameters - spin diffusion length and spin Hall angle. In metals, these are typically determined indirectly by probing magnetoresistance in magnet/metal…
We report electrical measurements of the current-induced spin polarization of the surface current in topological insulator devices where contributions from bulk and surface conduction can be disen- tangled by electrical gating. The devices…
We calculate the critical density of the zero-temperature, first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum wells. We find that the existence of the ferromagnetic transition is dependent upon the choice of well…
A polarized, internal electron target gradually polarizes a proton beam in a storage ring. Here, we derive the spin-transfer cross section for $\vec e\,(p,\vec p\, )e$\ scattering. A recent measurement of the polarizing effect of a…
We employ optical pump-probe spectroscopy to investigate the voltage dependence of spontaneous electron and nuclear spin polarizations in hybrid MnAs/n-GaAs and Fe/n-GaAs Schottky diodes. Through the hyperfine interaction, nuclear spin…
Spin-conserving and spin-flip opaque reflections of electrons from a potential barrier in heterostructures are described. An electric field of the barrier is considered to be the only source of energy spin splitting in the presence of…
Many proposed and realized spintronic devices involve spin injection and accumulation at an interface between a ferromagnet and a non-magnetic material. We examine the electric field, voltage profile, charge distribution, spin fluxes, and…
In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin…
We investigate the origin of purported "spin accumulation" signals observed in local "three-terminal" (3T) measurements of ferromagnet/insulator/n-Si tunnel junctions using inelastic electron tunneling spectroscopy (IETS). Voltage bias and…
Detection of the degree of circular polarization of the electroluminescence of a light-emitting diode fitted with a spin injecting contact (a spin-LED) allows for a direct determination of the spin polarization of the injected carriers.…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
We consider the possibility of detecting spin precession in a magnetic field by nonequilibrium transport processes. We find that time reversal symmetry imposes strong constraints on the problem. Suppose the tunneling occurs directly between…
Theoretical description of electron spin orientation and detection by short optical pulses is proposed for the ensembles of the singly charged semiconductor nanocrystals. The complex structure of the valence band in spherical nanocrystals…
In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the…
We demonstrate a mesoscopic spin polarizer/analyzer system that allows the spin polarization of current from a quantum point contact in an in-plane magnetic field to be measured. A transverse focusing geometry is used to couple current from…
Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It…