Related papers: Electrical Detection of Spin Accumulation at a Fer…
We find that photoexcited electrons in an n-GaAs epilayer rapidly (< 50 ps) spin-polarize due to the proximity of an epitaxial ferromagnetic metal. Comparison between MnAs/GaAs and Fe/GaAs structures reveals that this coherent spin…
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a…
Spin dependent transport in a ferromagnet/superconductor/ferromagnet single electron transistor is studied theoretically with spin accumulation, spin relaxation, gap suppression, and charging effects taken into account. A strong dependence…
A model describing spin-polarized current via discrete energy levels of a metallic nanoparticle, which has strongly asymmetric tunnel contacts to two ferromagnetic leads, is presented. In absence of spin-relaxation, the model leads to a…
The spin polarization of electrons trapped in InAs self-assembled quantum dot ensembles is investigated. A statistical approach for the population of the spin levels allows one to infer the spin polarization from the measure values of the…
We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers. Injected spins…
We propose a spin-dependent resonant tunneling structure to efficiently inject spin-polarized current into silicon (Si). By means of a heavily doped polycrystalline Si (Poly-Si) between the ferromagnetic metal (FM) and Si to reduce the…
Epitaxial ferromagnetic metal - semiconductor heterostructures are investigated using polarization-dependent electroabsorption measurements on GaAs p-type and n-type Schottky diodes with embedded In1-xGaxAs quantum wells. We have conducted…
We investigate spin transport through ferromagnetic graphene vertical heterostructures where a sandwiched tunneling layer is either a normal or ferroelectric insulator. We show that the spin-polarization of the tunneling current is…
We demonstrate the epitaxial growth of optical-quality electrically-gated III-V ferromagnetic quantum structures. Photoluminescence spectroscopy reveals that initially unpolarized photoexcited holes in a GaAs quantum well become…
We demonstrate that the flow of a longitudinal spin current with different spin polarization will induce different patterns of charge accumulation in a two-terminal strip, or electric current distribution in a four-terminal Hall-bar…
A large spin-accumulation voltage of more than 1.5 mV at 1 mA, i.e., a magnetoresistance of 1.5 {\Omega}, was measured by means of the local three-terminal magnetoresistance in nondegenerate Si-based lateral spin valves (LSVs) at room…
We investigate real-time dynamics of spin-polarized current in a quantum dot coupled to ferromagnetic leads in both parallel and antiparallel alignments. While an external bias voltage is taken constant in time, a gate terminal,…
A theory of spin polarized tunneling spectroscopy based on a scattering theory is given for tunneling junctions between ferromagnets and d-wave superconductors. The spin filtering effect of an exchange field in the insulator is also…
We electrically detect charge current induced spin polarization on the surface of molecular beam epitaxy grown Bi$_2$Te$_3$ thin film in a two-terminal device with a ferromagnetic MgO/Fe and a nonmagnetic Ti/Au contact. The two-point…
Non-equilibrium spin-dependent transport in magnetic tunnel junctions comprising a ferroelectric barrier is theoretically investigated. The exact solutions of the free electron Schr\"odinger equation for electron tunneling in the presence…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
We study the spin and charge accumulation in junctions between a superconductor and a ferromagnet or a normal metal in the presence of a Zeeman magnetic field, when the junction is taken out of equilibrium by applying a voltage bias. We…
The features of the spin and charge transport of electrons and holes in a metal and a semiconductor were studied using the Boltzmann transport equations. It was shown that the electrons and holes carry the spin in opposite directions in an…
The generation of non-equilibrium electron spin polarization, spin transport, and spin detection are fundamental in many quantum devices. We demonstrate that a lattice of magnetic nanodots enhances the electron spin polarization in…