Related papers: Electrical Detection of Spin Accumulation at a Fer…
The electron transport properties of hybrid ferromagnetic|normal metal structures such as multilayers and spin valves depend on the relative orientation of the magnetization direction of the ferromagnetic elements. Whereas the contrast in…
Electrical generation and transduction of polarized electron spins in semiconductors are of central interest in spintronics and quantum information science. While spin generation in semiconductors has been frequently realized via electrical…
We have fabricated a multi terminal lateral mesoscopic metallic spin valve demonstrating spin precession at room temperature, using tunnel barriers in combination with metallic ferromagnetic electrodes as spin injector and detector. The…
We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions…
A theory of spin-polarized electron transport in ferromagnet-semiconductor heterostructures, based on a unified semiclassical description of ballistic and diffusive transport in semiconductors, is outlined. The aim is to provide a framework…
Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The…
The controlled generation of localized spin densities is a key enabler of semiconductor spintronics In this work, we study spin Hall effect induced edge spin accumulation in a two-dimensional hole gas with strong spin orbit interactions. We…
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant…
We study spin transport in a fully hBN encapsulated monolayer-graphene van der Waals (vdW) heterostructure, at room temperature. A top-layer of bilayer-hBN is used as a tunnel barrier for spin-injection and detection in graphene with…
The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a…
Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n:GaAs. Optical injection provides a local dc source of polarized electrons, whose subsequent…
We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control,…
We investigate the time-dependent fluctuations of the electric current injected from a reservoir with a non-equilibrium spin accumulation into a mesoscopic conductor. We show how the current noise power directly reflects the magnitude of…
A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer…
The correlation between the magnetic moment in ferromagnetic alloys and the tunneling spin polarization in ferromagnet-insulator-superconductor tunneling experiments has been a mystery. The measured spin polarization for Fe, Co, Ni, and…
All-electrical control of spin transport in nanostructures has been the central interest and chal- lenge of spin physics and spintronics. Here we demonstrate on-chip spin polarizing/filtering actions by driving the gate-defined one…
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…
The ballistic spin-filter effect from a ferromagnetic metal into a semiconductor has theoretically been studied with an intention of detecting the spin polarizability of density of states in FM layer at a higher energy level. The physical…
We construct a spin-drift-diffusion model to describe spin-polarized electron transport in zincblende semiconductors in the presence of magnetic fields, electric fields, and off-diagonal strain. We present predictions of the model for…
An ensemble Monte Carlo method is used to study the spin injection through a ferromagnet-semiconductor junction where a Schottky barrier is formed. It is shown that the Schottky-barrier-induced electric field which is confined in the…