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Single-crystalline silicon is well known to be a poor thermoelectric material due to its high thermal conductivity. Most excellent research has focused on ways to decrease its thermal conductivity while retaining acceptably large power…

Materials Science · Physics 2022-01-04 Dario Narducci , Laura Zulian , Bruno Lorenzi , Federico Giulio , Elia Villa

We present a versatile, large-scale fabrication method for nanostructured semiconducting junctions. Silicon substrates were processed by femtosecond laser pulses in methanol and a quasi-ordered distribution of columnar nanospikes was formed…

Materials Science · Physics 2014-10-24 D. G. Georgiadou , M. Ulmeanu , M. Kompitsas , P. Argitis , M. Kandyla

After decades of research, superconductivity was finally found in nickel-based analogs of superconducting cuprates, with infinite-layer (IL) structure. These results are so far restricted to thin films in the case of IL-nickelates.…

We have investigated the confinement of 3-D vortices in specific cases of Type-II ($\kappa = 2$) nano-superconducting devices. The emergent pattern of vortices greatly depends on the orientation of an applied magnetic field (transverse or…

Superconductivity · Physics 2017-07-07 Wai Man Wu , Binoy Sobnack , Derek Michael Forrester , Feodor Kusmartsev

We report in-situ synthesis of iron oxide particles inside silicon nitride nanopores via a chemical reaction, monitored by current readout. Nanopores were formed by electroporation on glass chips (diameters from 1.7 to 11.3 nm),…

Superconducting properties of metallic nanowires can be entirely different from those of bulk superconductors because of the dominating role played by thermal and quantum fluctuations of the order parameter. For superconducting wires with…

Superconductivity · Physics 2009-12-16 K. Yu. Arutyunov , D. S. Golubev , A. D. Zaikin

Niobium thin film nanostructures were fabricated using electron beam lithography and a liftoff process involving a four layer resist system. Wires having micrometres in length and below 200 nm in width were deposited on an insulating…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Torsten Henning

We report high-pressure induced superconductivity in boron nanowires (BNWs) with rhombohedral crystal structure. Obviously different from bulk rhombohedral boron, these BNWs show a semiconductor-metal transition at much lower pressure than…

The pinning properties of type-II superconductors can be efficiently controlled by using laterally nanostructured ferromagnet / superconductor bilayers. This will be illustrated by studying the flux pinning in thin superconducting Pb films…

Superconductivity · Physics 2007-05-23 M. Lange , M. J. Van Bael , L. Van Look , S. Raedts , V. V. Moshchalkov , Y. Bruynseraede

The existence of shell structure and the accompanying high degeneracy of electronic levels leads to the possibility of strong superconducting pairing in metallic nanoclusters with N~100-1000 delocalized electrons. The most favorable cases…

Superconductivity · Physics 2009-11-11 Vladimir Z. Kresin , Yurii N. Ovchinnikov

Quantum computation based on superconducting circuits utilizes superconducting qubits with Josephson tunnel junctions. Engineering high-coherence qubits requires materials optimization. In this work, we present two superconducting thin film…

Superconductivity · Physics 2024-12-30 Snehal Mandal , Biplab Biswas , Suvankar Purakait , Anupam Roy , Biswarup Satpati , Indranil Das , B. N. Dev

We predict enhanced electron-hole superfluidity in two coupled electron-hole armchair-edge terminated graphene nanoribbons separated by a thin insulating barrier. In contrast to graphene monolayers, the multiple subbands of the nanoribbons…

Superconductivity · Physics 2016-05-10 M. Zarenia , A. Perali , F. M. Peeters , D. Neilson

We report low temperature transport measurements on suspended single walled carbon nanotubes (both individual tubes and ropes). The technique we have developed, where tubes are soldered on low resistive metallic contacts across a slit,…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 A. Kasumov , M. Kociak , M. Ferrier , R. Deblock , S. Gueron , B. Reulet , I. Khodos , O. Stephan , H. Bouchiat

Percolation phenomena are investigated and discussed in three kinds of nanostructures: first two are nanocrystalline silicon-based systems, Si nanodots embedded in amorphous SiO2 matrix and porous silicon formed by an oxidized nanowire…

Mesoscale and Nanoscale Physics · Physics 2011-06-23 I. Stavarache

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor delta-barriers. This…

We propose that the superconductivity recently observed in Nd$_{0.8}$Sr$_{0.2}$NiO$_2$ with critical temperature in the range $9$ K to $15$ K results from the same charge carriers and the same mechanism that we have proposed give rise to…

Superconductivity · Physics 2019-10-01 J. E. Hirsch , F. Marsiglio

Hydrogen resist lithography using the tip of a scanning tunneling microscope (STM) is employed for patterning p-type nanostructures in silicon. For this, the carrier density and mobility of boron $\delta$-layers, fabricated by gas-phase…

Mesoscale and Nanoscale Physics · Physics 2020-09-11 Tomáš Škereň , Sigrun Köster , Bastien Douhard , Claudia Fleischmann , Andreas Fuhrer

We report the first observation of superconductivity in heterostructure consisting of an insulating ferroelectric film (Ba$_{0.8}$Sr$_{0.2}$TiO$_3$) grown on an insulating parent compound of La$_2$CuO$_4$ with [001] orientation. The…

Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were…

Mesoscale and Nanoscale Physics · Physics 2017-11-27 Ashutosh Rath , J. K. Dash , R. R. Juluri , A Rosenauer , P V Satyam

We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly…