Related papers: Silicon nanostructures embedded in superconductor …
Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched…
Understanding the physical and chemical processes at the interface of metals and topological insulators is crucial for developing the next generation of topological quantum devices. Here we report the discovery of robust superconductivity…
Using an approximate time-dependent density functional theory method, we calculate the absorption and luminescence spectra for hydrogen passivated silicon nanoscale structures with large aspect ratio. The effect of electron confinement in…
We have contacted single wall carbon nanotubes grown by chemical vapor deposition to superconducting Ti/Al/Ti electrodes. The device, we here report on is in the Kondo regime exhibiting a four-fold shell structure, where a clear signature…
V3Si, a classical silicide superconductor with relatively high TC (~16 K), is promising for constructing silicon-based superconducting devices and hetero-structures. However, real space characterization on its surfaces and superconducting…
Superconducting micro- and nanohelices are proposed for the first time. A theoretical investigation of the superconducting state in the helical coils at the micro- and nanoscale is performed within the time-dependent Ginzburg-Landau…
We report on the fabrication and electrical transport properties of superconducting junctions made of \beta-Ag$_{2}$Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the…
We report observations of unusual normal-state electronic conduction properties and superconducting characteristics of high-quality CoSi$_2$/Si films grown on silicon Si(100) and Si(111) substrates. A good understanding of these features…
We develop a robust and versatile platform to define nanostructures at oxide interfaces via patterned top gates. Using LaAlO$_3$/SrTiO$_3$ as a model system, we demonstrate controllable electrostatic confinement of electrons to nanoscale…
The theoretical description of the thermodynamic properties of ferromagnetic/superconductor/ferromagnetic (F/S/F) systems of nanoscopic scale is proposed. Their superconducting characteristics strongly depend on the mutual orientation of…
Silicon can be heavily doped with phosphorus in a single atomic layer (a $\delta$ layer), significantly altering the electronic structure of the conduction bands within the material. Recent progress has also made it possible to further dope…
We report an investigation of the structural and electronic properties of hybrid superconductor/ferromagnet (S/F) bilayers of composition Nb/Cu$_{60}$Ni$_{40}$ prepared by magnetron sputtering. X-ray and neutron reflectometry show that both…
In a zero-dimensional superconductor, quantum size effects(QSE) not only set the limit to superconductivity, but are also at the heart of new phenomena such as shell effects, which have been predicted to result in large enhancements of the…
Unconventional superconductivity and in particular triplet superconductivity have been front and center of topological materials and quantum technology research. Here we report our observation of triplet superconductivity in nonmagnetic…
Following significant progress in the visualization and characterization of hybrid superconducting-semiconducting systems, greatly propelled by reports of Majorana zero modes in nanowire devices, considerable attention has been devoted to…
We demonstrate electron cooling in silicon using platinum silicide as a superconductor contact to selectively remove the highest energy electrons. The superconducting critical temperature of bulk PtSi is reduced from around 1 K to 0.79 K…
We have studied the proximity_induced superconductivity in R7xR7R19.1o Ni nanoislands by combing scanning tunnelling microscopy_spectroscopy (STM_STS) with density functional theory (DFT) calculation. Through depositing Ni onto Pb(111)…
Suspended superconducting nanostructures of MoRe $50\%/50\%$ by weight are fabricated employing commonly used fabrication steps in micro- and nano-meter scale devices followed by wet-etching with Hydro-fluoric acid of a SiO$_2$ sacrificial…
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…
Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated…