Related papers: Highly oriented VO2 thin films prepared by sol-gel…
Vanadium dioxide with metal-to-insulator transition (MIT) that is triggered by heat, current or light is a promising material for modern active THz/mid-IR metasurfaces and all-optical big data processing systems. Multilayer VO2-based active…
The growth of wafer-scale and uniform monoclinic VO2 film was a challenge if considering the multivalent vanadium atom and the various phase structures of VO2 compound. Directly oxidizing metallic vanadium film in oxygen gas seemed to be an…
In this paper we used Raman spectroscopy to investigate the optical properties of vanadium dioxide (VO2) thin films during the thermally induced insulating to metallic phase transition. We observed a significant difference in transition…
We report on the magnetic and transport studies of hafnium oxide thin films grown by pulsed-laser deposition on sapphire substrates under different oxygen pressures, ranging from 10-7 to 10-1 mbar. Some physical properties of these thin…
In this paper, we report the growth of NaxCoO2 thin films by pulsed-laser deposition (PLD). It is shown that the concentration of sodium is very sensitive to the substrate temperature and the target-substrate distance due to the evaporation…
The ability to control porosity in oxide thin films is one of the key factors that determine their properties. Despite the abundance of dry processes for the synthesis of oxide porous layers, the high porosity range is typically achieved by…
Very thick, ~ 40 $\mu$m, clean, and highly textured MgB2 film was effectively grown on an Al2O3 substrate. The fabrication technique is by the hybrid physical-chemical vapor deposition (HPCVD) using B2H6 gas and Mg ingot as the sources. The…
This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the…
Vanadium Dioxide (VO2) is a strongly correlated material, which exhibits insulator to metal transition at ~68 C along with large resistivity and infrared optical reflectance modulation. In this work, we use atmospheric pressure thermal…
Amorphous VO$_x$ films without a hysteretic phase transition are stable with respect to thermal cycling and highly demanded as sensitive elements of the resistive thermometers and microbolometers. In this paper we present simple and…
Vanadium dioxide (VO2) as a phase-change material controls the transferred heat during phase transition process between metal and insulator states. At temperature above 68C, the rutile structure VO2 keeps the heat out and increases the IR…
MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive X-ray spectroscopy was used to estimate the cation composition ratios. To mitigate…
We present a study of the synthesis of epitaxial V$_2$O$_3$ films on $c$-plane Al$_2$O$_3$ substrates by reactive dc-magnetron sputtering. The results reveal a temperature window, at substantially lower values than previously reported,…
VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces…
We report a high-performance thermochromic VO2-based coating prepared by using a three-step process, consisting of magnetron sputter depositions of SiO2 films and V-W films and their postannealing, on standard glass at a low substrate…
The electronic anisotropy in MgB2, is still a not completely clear topic; high quality c-oriented films are suitable systems to investigate this property. In this work we present our results on MgB2 superconducting thin films grown on MgO…
This work reports on the synthesis of CrO2 thin films by atmospheric pressure CVD using chromium trioxide (CrO3) and oxygen. Highly oriented (100) CrO2 films containing highly oriented (0001) Cr2O3 were grown onto Al2O3(0001) substrates.…
Plasma enhanced atomic layer deposition was used to deposit thin films of Ga2O3 on to c-plane sapphire substrates using triethylgallium and O2 plasma. The influence of substrate temperature and plasma processing parameters on the resultant…
Aluminum oxide thin films were deposited on silicon substrates under different deposition conditions using pulse pressure metal organic chemical vapour deposition (PP-MOCVD). The current study investigates into the growth mechanism of the…
Amorphous vanadium dioxide (VO$_{2}$) films deposited by atomic layer deposition (ALD) were crystallized with an ex situ anneal at 660-670 ${\deg}$C for 1-2 hours under a low oxygen pressure (10$^{-4}$ to 10$^{-5}$ Torr). Under these…