Magnetic properties of HO2 thin films

Nicolas Hadacek; Alexandre Nossov; Laurent Ranno; Pierre Strobel; Rose-Marie Galéra

doi:10.1088/0953-8984/19/48/486206

Magnetic properties of HO2 thin films

Strongly Correlated Electrons 2007-12-17 v1

Authors: Nicolas Hadacek , Alexandre Nossov , Laurent Ranno , Pierre Strobel , Rose-Marie Galéra

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Abstract

We report on the magnetic and transport studies of hafnium oxide thin films grown by pulsed-laser deposition on sapphire substrates under different oxygen pressures, ranging from 10-7 to 10-1 mbar. Some physical properties of these thin films appear to depend on the oxygen pressure during growth: the film grown at low oxygen pressure (P ~= 10-7 mbar) has a metallic aspect and is conducting, with a positive Hall signal, while those grown under higher oxygen pressures (7 x 10-5 <= P <= 0.4 mbar) are insulating. However, no intrinsic ferromagnetic signal could be attributed to the HfO2 films, irrespective of the oxygen pressure during the deposition.

Keywords

thin film magnetism thin films thin film physics

Cite

@article{arxiv.0712.2410,
  title  = {Magnetic properties of HO2 thin films},
  author = {Nicolas Hadacek and Alexandre Nossov and Laurent Ranno and Pierre Strobel and Rose-Marie Galéra},
  journal= {arXiv preprint arXiv:0712.2410},
  year   = {2007}
}

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