Related papers: SET Backaction on the Single Electron Box
We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron…
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus…
We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor (SET) fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the…
We study the effect of electron-electron interactions on the resonant-tunneling spectroscopy of the localized states in a barrier. Using a simple model of three localized states, we show that, due to the Coulomb interactions, a single state…
The influence of measurement back action on electro-optic sampling of electromagnetic quantum fluctuations is investigated. Based on a cascaded treatment of the nonlinear interaction between a near-infrared coherent probe and the…
We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the charge in the dot. Voltage biasing a gate draws charge from a…
The description of transport phenomena in devices consisting of arrays of tunnel junctions, and the experimental confirmation of these predictions is one of the great successes of mesoscopic physics. The aim of this paper is to give a…
The voltage dependence of nanoelectromechanical effects in a system where the quantized mechanical vibrations of a quantum dot are coupled to coherent tunneling of electrons through a single level in the dot is studied. It is found that…
Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a…
The interplay between Coulomb interaction and orbital symmetry produces specific transport characteristics in molecular single electron transistors (SET) that can be considered as the fingerprints of the contacted molecule. Specifically we…
We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the…
We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending…
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot…
We show how population inversion (PI) occurs in a two-level system (TLS) while measuring its charge using a capacitively coupled superconducting single-electron transistor (SSET), biased in the subgap regime, where the current through the…
We analyze the noise properties of two single electron transistors (SETs) coupled via a shared voltage gate consisting of a nanomechanical resonator. Working in the regime where the resonator can be treated as a classical system, we find…
We introduce a rate formalism to treat classically forbidden electron transport through a quantum dot (cotunneling) in the presence of a coupled measurement device. We demonstrate this formalism for a toy model case of cotunneling through a…
We examine the effects of electron-electron interactions on transport between edge states in a multilayer integer quantum Hall system. The edge states of such a system, coupled by interlayer tunneling, form a two-dimensional, chiral metal…
We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds…
Quantum fluctuations of Coulomb blockade are investigated as a function of the coupling to reservoirs in semiconductor quantum dots. We use fluctuations in the distance between peaks $\Delta N$ apart to characterize both the amplitude and…