Related papers: Control of spin coherence in $n$-type GaAs quantum…
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where…
One-body mechanisms of spin splitting of the energy spectrum of 2D electrons in a one-side doped (001) GaAs/Al$_x$Ga$_{1-x}$As quantum well have been studied theoretically and experimentally. The interfacial spin splitting has been shown to…
The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron…
Conduction electron spin lifetimes ($T_1$) and spin coherence times ($T_2$) are strongly modified in semiconductor quantum wells by electric fields. Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show roughly a…
The interplay between Rashba, Dresselhaus and Zeeman interactions in a quantum well submitted to an external magnetic field is studied by means of an accurate analytical solution of the Hamiltonian, including electron-electron interactions…
A strong anisotropy of electron spin decoherence is observed in GaAs/(AlGa)As quantum wells grown on (110) oriented substrate. The spin lifetime of spins perpendicular to the growth direction is about one order of magnitude shorter compared…
The carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas has been studied by picosecond pump-probe Kerr rotation with an in-plane magnetic field. For resonant optical excitation of the positively charged…
Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to…
We have measured T1 spin lifetimes of a 14 nm modulation-doped (100) GaAs quantum well using a time-resolved pump-probe Kerr rotation technique. The quantum well was selected by tuning the wavelength of the probe laser. T1 lifetimes in…
Time-resolved Kerr rotation spectroscopy as a function of pump-probe distance, voltage and magnetic field is used to measure the momentum-dependent spin splitting energies in GaAs and InGaAs epilayers. The strain of the samples can be…
Rashba and linear Dresselhaus interactions are believed to yield dominant contribution to the spin splitting of two-dimensional electrons in the quantum wells based on A$_3$B$_5$ compounds. We show that the interfacial spin-orbit…
The spin-orbit interaction of two-dimensional (2D) electrons in semiconductor quantum wells is usually considered to be determined by the band profile of a heterostructure. In the GaAs/AlGaAs type heterosystems, this interaction consists of…
In time-resolved Faraday rotation experiments we have detected an inplane anisotropy of the electron spin-dephasing time (SDT) in an $n$--modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. The SDT was measured with magnetic…
Exciton, trion and electron spin dynamics in a 20 nm wide modulation-doped GaAs single quantum well are investigated using resonant ultrafast two-color Kerr rotation spectroscopy. Excitons and trions are selectively detected by resonant…
Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10 K and decreases with temperature. By varying the…
We investigate the Rashba and Dresselhaus spin-orbit (SO) couplings in GaAs quantum wells in the range of well widths $w$ allowing for a transition of the electron occupancy from one to two subbands. By performing a detailed…
The effective linear coupling coefficient and the total spin-splitting are calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and gate voltage affect an internal field and an electron density distribution in the…
The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin…
Anisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110) quantum wells of different width and height are investigated by time-resolved Faraday rotation and time-resolved transmission and are compared to the…
In a semiconductor, collective excitations of spin textures usually decay rather fast due to D'yakonov-Perel' spin relaxation. The latter arises from spin-orbit coupling, which induces wave-vector-dependent spin rotations that, in…