English

Anisotropic Electron Spin Lifetime in (In,Ga)As/GaAs (110) Quantum Wells

Materials Science 2007-06-13 v2

Abstract

Anisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110) quantum wells of different width and height are investigated by time-resolved Faraday rotation and time-resolved transmission and are compared to the (001)-orientation. From the suppression of spin precession, the ratio of in-plane to out-of-plane spin lifetimes is calculated. Whereas the ratio increases with In concentration in agreement with theory, a surprisingly high anisotropy of 480 is observed for the broadest quantum well, when expressed in terms of spin relaxation times.

Keywords

Cite

@article{arxiv.cond-mat/0701104,
  title  = {Anisotropic Electron Spin Lifetime in (In,Ga)As/GaAs (110) Quantum Wells},
  author = {L. Schreiber and D. Duda and B. Beschoten and G. Güntherodt and H. -P. Schönherr and J. Herfort},
  journal= {arXiv preprint arXiv:cond-mat/0701104},
  year   = {2007}
}

Comments

4 pages, 4 figures, revised