English

Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects

Mesoscale and Nanoscale Physics 2009-06-23 v2

Abstract

A strong anisotropy of electron spin decoherence is observed in GaAs/(AlGa)As quantum wells grown on (110) oriented substrate. The spin lifetime of spins perpendicular to the growth direction is about one order of magnitude shorter compared to spins along (110). The spin lifetimes of both spin orientations decrease monotonically above a temperature of 80 and 120 K, respectively. The decrease is very surprising for spins along (110) direction and cannot be explained by the usual Dyakonov Perel dephasing mechanism. A novel spin dephasing mechanism is put forward that is based on scattering of electrons between different quantum well subbands.

Keywords

Cite

@article{arxiv.cond-mat/0403052,
  title  = {Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects},
  author = {S. Doehrmann and D. Haegele and J. Rudolph and D. Schuh and M. Bichler and M. Oestreich},
  journal= {arXiv preprint arXiv:cond-mat/0403052},
  year   = {2009}
}

Comments

4 pages, 3 postscript figures, corrected typos