Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-Nitride quantum wells

V. I. Litvinov

doi:10.1063/1.2397559

Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-Nitride quantum wells

Materials Science 2009-11-11 v1

Authors: V. I. Litvinov

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Abstract

The effective linear coupling coefficient and the total spin-splitting are calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and gate voltage affect an internal field and an electron density distribution in the growth direction that has direct effect on a spin-splitting. The sign of structural inversion asymmetry (SIA) spin-orbit coupling coefficient depends on an internal electric field in the well that results in different signs for Ga-face and N-face III-Nitride structures. The effective linear coupling coefficient is always positive because of the Dresselhaus-type contribution that is a major one in quantum wells under consideration. The magnitude of the spin-splitting is comparable with that experimentally observed in III-Nitrides and III-V zinc-blende structures.

Keywords

Rashba spin-orbit coupling III-Nitride quantum wells structural inversion asymmetry Dresselhaus contribution spin-splitting internal electric field

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@article{arxiv.cond-mat/0608179,
  title  = {Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-Nitride quantum wells},
  author = {V. I. Litvinov},
  journal= {arXiv preprint arXiv:cond-mat/0608179},
  year   = {2009}
}

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17 pages, 8 figures

Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-Nitride quantum wells

Abstract

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