Related papers: Resonant spin-dependent electron coupling in a III…
We investigate the spin-dependent tunneling properties in a three-terminal III-V-based ferromagnetic-semiconductor heterostructure with a 2.5-nm-thick GaMnAs quantum well (QW) and double barriers. We successfully control the quantum levels…
A magnetophotoluminescence study of the carrier transfer with hybrid InAs/GaAs quantum dot(QD)-InGaAs quantum well (QW) structures is carried out where we observe an unsual dependence of the photoluminescence (PL) on the GaAs barrier…
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in the GaMnAs/GaAs/InGaAs…
Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2…
We suggest a method for calculating electronic spectra in ordered and disordered semiconductor structures (superlattices) forming double quantum wells (QW). In our method, we represent the solution of Schr\"odinger equation for QW potential…
We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped…
A three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent…
In-plane magnetic field photoluminescence spectra from a series of GaAs/AlGaAs coupled double quantum wells show distinctive doublet structures related to the symmetric and antisymmetric states. The magnetic field behavior of the upper…
We examine effects of inversion asymmetry of a GaAs/Al0.3Ga0.7As quantum well (QW) on electron-nuclear spin coupling in the fractional quantum Hall (QH) regime. Increasing the QW potential asymmetry at a fixed Landau-level filling factor…
Hybrid structures incorpora1ng both III-nitride and Transi1on Metal Dichalcogenide (TMD) semiconductors have strong applica1on poten1al for light harves1ng and optoelectronics. Here we have inves1gated the proper1es of hybrid structures…
Electronic structure calculations for layered zincblende semiconductors are described within a restricted basis formalism which naturally and non-perturbatively accomodates both crystalline inversion asymmetry and cubic anisotropy. These…
The electric conductivity behavior in the single and double tunnel-coupled quantum wells (QW) with different doping profile caused by impact of short pulses of the strong longitudinal (in the quantum wells plane) electric field has been…
Spin-magnetophonon level splitting in a quantum well made of a semimagnetic wide gap semiconductor is considered. The semimagnetic semiconductors are characterized by a large effective $g$ factor. The resonance conditions $\hbar\omega_{\rm…
Here we investigate the spin-dependent subband structure of newly-developed Mn-based modulation-doped quantum wells. In the presence of an external magnetic field, the s-d exchange coupling between carriers and localized d electrons of the…
The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a…
The in-plane magnetic field suppresses the quantum coupling between electrons in a double quantum well structure. The microscopical theory of this effect is developed and confirmed experimentally. We have shown that the decrease of the…
A {\it microscopic} treatment of fundamental edge magnetoplasmons (EMPs) along the edge of a double quantum well (DQW) is presented for strong magnetic fields, low temperatures, and total filling factor \nu=2. It is valid for lateral…
We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an…
A systematic study of the energetics of electrons in an interface in a magnetic field is reported with exact analytical calculations based on a Landau Level (LL) picture, by serious consideration of the finite thickness of the Quantum Well…
This letter reports on the growth, structure and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during…