Related papers: Enhanced annealing effect in an oxygen atmosphere …

The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectroscopy was used to monitor changes in oxygen…

We have performed a systematic investigation of magnetotransport of a series of as-grown and annealed Ga1-xMnxAs samples with 0.011 <= x <= 0.09. We find that the anisotropic magnetoresistance (AMR) generally decreases with increasing…

We have studied the depth-dependent magnetic and structural properties of as-grown and optimally annealed Ga[1-x]Mn[x]As films using polarized neutron reflectometry. In addition to increasing total magnetization, the annealing process was…

The double perovskite La2NiMnO6 (LNMO) exhibits complex magnetism due to the competition of magnetic interactions that are strongly affected by structural and magnetic inhomogeneities. In this work, we study the effect of oxygen annealing…

A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth…

Annealing can increase the Curie temperature and net magnetization in uncapped (Ga,Mn)As films, effects that are suppressed when the films are capped with GaAs. Previous polarized neutron reflectometry (PNR) studies of uncapped (Ga,Mn)As…

The magnetic and transport properties of (GaMn)As are known to be influenced by postgrowth annealing, and it is generally accepted that these modifications are due to outdiffusion of Mn interstitials. We show that the annealing-induced…

The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The anisotropy magnetoresistance decreases with increasing of the Mn…

Magnetic properties of thin (Ga,Mn)As layers improve during annealing by out-diffusion of interstitial Mn ions to a free surface. Out-diffused Mn atoms participate in the growth of a Mn-rich surface layer and a saturation of this layer…

We report on the recrystallization of 200 nm thick as-grown Yttrium Iron Garnet (Y_3.4 Fe_4.6 O_12) films on (111) face of Gadolinium Gallium Garnet (GGG) single crystals by post-deposition annealing. Epitaxial conversion of the as-grown…

Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the…

The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular…

We have used complementary neutron and x-ray reflectivity techniques to examine the depth profiles of a series of as-grown and annealed Ga[1-x]Mn[x]As thin films. A magnetization gradient is observed for two as-grown films and originates…

Mn-doped \b{eta}-Ga2O3 (GMO) films with room-temperature ferromagnetism (RTFM) are synthesized by polymer-assisted deposition and the effects of annealing atmosphere (air or pure O2 gas) on their structures and physical properties are…

The effect of annealing under a magnetic field on the microstructure and properties of YNixMn1-xO3 (x=0.33 and 0.5) films has been investigated. It is found that the ferromagnetic transition temperature is significantly enhanced after post…

(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of…

The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR)…

Pulsed ArF laser annealing in air and in hydrogen atmosphere improves the optical properties of ZnO nanostructured films. Independently on the ambient atmosphere, laser annealing produces two major effects on the photoluminescence (PL)…

The effect of thermal annealing on wurtzite ZnO, terminated by two surfaces, (0 0 0 $\bar 1$) (which is oxygen-terminated) and (0 0 0 1) (which is Zn-terminated), is investigated via molecular dynamics simulation using reactive force field…

We investigated the effects of annealing on LaMnO$_3$ epitaxial thin films grown by pulsed laser deposition and propose an efficient method of characterizing their stoichiometry. Structural, magnetic, and optical properties coherently…