Anisotropic Magnetoresistance in GaMnAs films

K. Y. Wang; K. W. Edmonds; R. P. Campion; L. X. Zhao; A. C. Neumann; C. T. Foxon; B. L. Gallagher; P. C. Main

Anisotropic Magnetoresistance in GaMnAs films

Materials Science 2007-05-23 v1 Mesoscale and Nanoscale Physics

Authors: K. Y. Wang , K. W. Edmonds , R. P. Campion , L. X. Zhao , A. C. Neumann , C. T. Foxon , B. L. Gallagher , P. C. Main

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Abstract

The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 =< x =< 0.8 have been measured for three mutually orthogonal orientations of the external magnetic field. The anisotropy magnetoresistance decreases with increasing of the Mn content, which means that the magnetic disorder or defects scattering increases with increasing of Mn content. And also the magneto-crystalline anisotropy increases with increasing of Mn concentration.

Keywords

anisotropic magnetoresistance GaMnAs magnetic disorder Mn content magneto-crystalline anisotropy

Cite

@article{arxiv.cond-mat/0211697,
  title  = {Anisotropic Magnetoresistance in GaMnAs films},
  author = {K. Y. Wang and K. W. Edmonds and R. P. Campion and L. X. Zhao and A. C. Neumann and C. T. Foxon and B. L. Gallagher and P. C. Main},
  journal= {arXiv preprint arXiv:cond-mat/0211697},
  year   = {2007}
}

Comments

Presented at ICPS-26, July 2002

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