Related papers: Novel Reconfigurable Logic Gates Using Spin Metal-…
We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the…
New computing technologies are being sought near the end of CMOS transistor scaling, meanwhile superconducting digital, i.e., single-flux quantum (SFQ), logic allows incredibly efficient gates which are relevant to the impending transition.…
In magnetic materials nontrivial spin textures may emerge owing to the competition among different types of magnetic interactions. Among such spin textures, chiral magnetic solitons represent topologically protected spin configurations with…
In this article, we present a dynamical scheme to obtain a reconfigurable noise-aided logic gate, that yields all six fundamental 2-input logic operations, including the XOR operation. The setup consists of two coupled bistable subsystems…
The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using metal-oxide-semiconductor field-effect transistor (MOSFET) type of spin-transistors referred to as pseudo-spin-MOSFET…
We have investigated the realizability of the controlled-NOT (CNOT) gate and characterized the gate operation by quantum process tomography for a chain of qubits, realized by electrons confined in self-assembled quantum dots embedded in the…
We demonstrate the functionality of spin-wave logic XNOR and NAND gates based on a Mach-Zehnder type interferometer which has arms implemented as sections of ferrite film spin-wave waveguides. Logical input signals are applied to the gates…
In this paper, we present a general reconfigurable multiple-valued logic circuit. The proposed architecture is based on threshold logic gate and is compatible with binary logic, which allows a designer to easily integrate multiple valued…
We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that…
Reversible logic can provide lower switching energy costs relative to all irreversible logic, including those developed by industry in semiconductor circuits, however, more research is needed to understand what is possible. Superconducting…
In this paper, we demonstrate by simulation the feasibility of electrostatically doped and therefore reconfigurable planar field-effect-transistor (FET) structure which is based on our already fabricated and published Si-nanowire (SiNW)…
The growing demand for ultra low power computing and the emergence of quantum technologies have intensified interest in cryogenic electronics, particularly superconducting devices. Despite their promise, current controlled superconducting…
Stable, reproducible, scalable, addressable, and controllable hybrid superconductor-semiconductor (S-Sm) junctions and switches are key circuit elements and building blocks of gate-based quantum processors. The electrostatic field effect…
Magnetic skyrmions, which are topological particle-like excitations in ferromagnets, have attracted a lot of attention recently. Skyrmionics is an attempt to use magnetic skyrmions as information carriers in next generation spintronic…
The negatively charged nitrogen-vacancy (NV) center spin in diamond can be used to realize quantum computation and to sense magnetic fields. Its spin triplet consists of three levels labeled with its spin z-components of +1, 0, and -1.…
The Toffoli gate is the essential ingredient for reversible computing, an energy efficient classical computational paradigm that evades the energy dissipation resulting from Landauer's principle. In this paper we analyze different setups to…
The high-quality-factor mechanical resonator in electromechanical systems has facilitated dynamic control of phonons via parametric nonlinear processes and paved the development of mechanical logic-elements. However the resonating element…
We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes ballistic dynamics of 2D…
Spin Hall nano oscillators (SHNOs) are promising candidates for neuromorphic computing due to their miniaturized dimensions, non-linearity, fast dynamics, and ability to synchronize in long chains and arrays. However, tuning the individual…