Related papers: Novel Reconfigurable Logic Gates Using Spin Metal-…
We demonstrate for the first time that functionally complete digital logic can be created by using three terminal devices each consisting of a magnetic tunnel junction (MTJ) and spin transfer torque (STT) element with a shared free magnetic…
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivity and drift velocity are modified while keeping constant…
By using the memristor's memory to both store a bit and perform an operation with a second input bit, simple Boolean logic gates have been built with a single memristor. The operation makes use of the interaction of current spikes…
The theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the current flowing from the source (spin injector) to the…
Logic gates based on magnetic elements are promising candidates for the logic-in-memory applications with nonvolatile data retention, near-zero leakage and scalability. In such spin-based logic device, however, the multi-strip structure and…
Electronic logic gates are the basic building blocks of every computing and micro controlling system. Logic gates are made of switches, such as diodes and transistors. Ion-selective, ionic switches may emulate electronic switches [1-8]. If…
Reversible logic gates were previously implemented in superconducting circuits as adiabatic-reversible gates, which are powered with a sufficiently slow clock. In contrast, we are studying ballistic-reversible gates, where fluxons serve to…
We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single layer graphene spin channel and relies on spin…
In this technical note, we address the comments on the energy estimates for Magnetoelectric Spin-orbit (MESO) Logic, a new logic device proposed by the authors. We provide an analytical derivation of the switching energy, and support it…
Nanomagnetic logic, which makes use of arrays of dipolar-coupled single domain nanomagnets for computation, holds promise as a low power alternative to traditional computation with CMOS. Beyond the use of nanomagnets for Boolean logic,…
Spin-gapless semiconductors (SGSs) are a promising class of materials for spintronic applications, enabling functions beyond conventional electronics. This study introduces a novel design for multifunctional spintronic field-effect…
The realization and study of arrays of interacting magnetic nanoislands, such as artificial spin ices, have reached mature levels of control that allow design and demonstration of exotic, collective behaviors not seen in natural materials.…
Recent advances in manipulating single electron spins in quantum dots have brought us close to the realization of classical logic gates based on representing binary bits in spin polarizations of single electrons. Here, we show that a linear…
We investigated a possible use of the magnonic interferometric switches in multi-valued logic circuits. The switch is a three-terminal device consisting of two spin channels where input, control, and output signals are spin waves. Signal…
A promising branch of neuromorphic computing aims to perform cognitive operations in hardware leveraging the physics of efficient and well-established nano-devices. In this work, we present a reconfigurable classifier based on a network of…
Spin waves (SWs) have been considered a promising candidate for encoding information with lower power consumption. Here, we propose the dual function SW logic gates based on the electric field controlling the SW propagation in the Fe film…
Conventional computer electronics creates a dichotomy between how information is processed and how it is stored. Silicon chips process information by controlling the flow of charge through a network of logic gates. This information is then…
Practical memristor came into picture just few years back and instantly became the topic of interest for researchers and scientists. Memristor is the fourth basic two-terminal passive circuit element apart from well known resistor,…
Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for…