Related papers: Novel Reconfigurable Logic Gates Using Spin Metal-…

While superconductors are highly attractive for energy-efficient computing, fundamental limitations in their logic circuit integration have hindered scaling and led to increased energy consumption. We therefore propose and experimentally…

We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is non-degenerate n-type Si,…

We introduce a novel logic style with self-checking capability to enhance hardware reliability at logic level. The proposed logic cells have two-rail inputs/outputs, and the functionality for each rail of outputs enables construction of…

Antiferromagnets are promising materials for future spintronic applications due to their unique properties including zero stray fields, robustness versus external magnetic fields and ultrafast dynamics, which have attracted extensive…

Invertible logic can operate in one of two modes: 1) a forward mode, in which inputs are presented and a single, correct output is produced, and 2) a reverse mode, in which the output is fixed and the inputs take on values consistent with…

We propose a spintronic metal oxide semiconductor field effect transistor (spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only one of…

Integrated circuits (ICs) that can operate at high temperature have a wide variety of applications in the fields of automotive, aerospace, space exploration, and deep-well drilling. Conventional silicon-based complementary…

Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…

Magnonic logic gates represent a crucial step toward realizing fully magnonic data processing systems without reliance on conventional electronic or photonic elements. Recently, a universal and reconfigurable inverse-design device has been…

We show that the established physics of spin valves together with the recently discovered giant spin-Hall effect could be used to construct Read and Write units that can be integrated into a single spin switch with input-output isolation,…

We examine spin dependent transport in a quantum interferometer composed of magnetic atomic sites based on transfer matrix formalism. The interferometer, threaded by a magnetic flux $\phi$, is symmetrically attached to two semi-infinite…

Nanomagnetic implementations of Boolean logic [1,2] have garnered attention because of their non-volatility and the potential for unprecedented energy-efficiency. Unfortunately, the large dissipative losses that take place when nanomagnets…

Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been…

We propose and develop a concept of magnonic logic gates enabling reversible computing. The gates consist of passive elements: waveguides, cross-junctions and phase shifters. Logical 0 and 1 are encoded in the relative phase of the…

A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of both spin relaxation in the channel and the…

We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electron spin polarization P_S in Si and the magnetoresistance…

Traditional silicon binary circuits continue to face challenges such as high leakage power dissipation and large area of interconnections. Multiple-Valued Logic (MVL) and nano devices are two feasible solutions to overcome these problems.…

Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…

Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…

The recent demonstration of current-driven magnetic domain wall logic [Z. Luo et al., Nature 579:214] was based on a three-input logic gate that was identified as a reconfigurable NAND/NOR function. We reinterpret this logic gate as a…