Related papers: Novel Reconfigurable Logic Gates Using Spin Metal-…

In this paper we discuss the potential of emerging spintorque devices for computing applications. Recent proposals for spinbased computing schemes may be differentiated as all-spin vs. hybrid, programmable vs. fixed, and, Boolean vs.…

Electrostatically Formed Nanowire (EFN) based transistors have been suggested in the past as gas sensing devices. These transistors are multiple gate transistors in which the source to drain conduction path is determined by the bias applied…

The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…

Spin qubits offer one of the most promising routes to the implementation of quantum computers. Very recent results in semiconductor quantum dots show that electrically-controlled gating schemes are particularly well-suited for the…

Spin torque majority gates are modeled and several regimes of magnetization switching (some leading to failure) are discovered. The switching speed and noise margins are determined for STMGs and an adder based on it. With switching time of…

Nanomagnets with biaxial magnetocrystalline anisotropy have four stable magnetization orientations that can encode 4-state logic bits (00), (01), (11) and (10). Recently, a 4-state NOR gate derived from three such nanomagnets, interacting…

Nanomagnetic logic, in which the outcome of a computation is embedded into the energy hierarchy of magnetostatically coupled nanomagnets, offers an attractive pathway to implement in-memory computation. This computational paradigm avoids…

Here we propose four-terminal molecular devices as functional logic gates (AND, NOR and XOR, respectively). Such devices are composed of single organic molecule connected to gold electrodes and located in between gate terminals.…

Recent achievements in the field of gate defined semiconductor quantum dots reinforce the concept of a spin-based quantum computer consisting of nodes of locally connected qubits which communicate with each other via superconducting circuit…

Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required…

This letter reports on the realization of logic circuits employing solution-processed networks of single-walled carbon nanotubes. We constructed basic logic gates (inverter, NAND and NOR) with n- and p-type field-effect transistors…

The three-spin-$1/2$ decoherence-free subsystem defines a logical qubit protected from collective noise and supports exchange-only universal gates. Such logical qubits are well-suited for implementation with electrically-defined quantum…

Realization of logic circuits from graphene is very attractive for high-speed nanoelectronics. However, the intrinsic ambipolar nature hinders the formation of graphene logic devices with the conventional complementary architecture. Using…

We propose a method of controlling a quantum logic gate in a solid-state NMR quantum computer. A switchable inter-qubit coupling can be generated by using the longitudinal component of the Suhl-Nakamura interaction induced by a local…

Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have…

The design of a microstructured, fully functional spin-wave majority gate is presented and studied using micromagnetic simulations. This all-magnon logic gate consists of three-input waveguides, a spin-wave combiner and an output waveguide.…

Energy conservative devices are the need of the modern technology which leads to the development of reversible logic. The synthesis of reversible logic has become an intensely studied area as it overcomes the problem of power dissipation…

The effect of polarization rotation on the performance of metal oxide semiconductor field-effect transistors was investigated with a Landau-Ginzburg-Devonshire theory based model. In this analytical model, depolarization field, polarization…

We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform…

Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two…