Related papers: Hole spin relaxation in semiconductor quantum dots
We investigate the temperature dependence of the coefficients in the Landau-Lifshitz-Gilbert equation in ferromagnetic GaMnAs by employing the Zener model. We first calculate the hole spin relaxation time based on the microscopic kinetic…
We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous strain relaxation on the lateral surface creates a ring-like potential near the perimeter of the dot,…
We present a theory for the dissipation of electronic spins trapped in quantum dots due to their coupling to the host lattice acoustic phonon modes. Based on the theory of dissipative two level systems for the spin dynamics, we derive a…
Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic…
We perform an investigation on the spin relaxation for $n$-type ZnO (0001) quantum wells by numerically solving the kinetic spin Bloch equations with all the relevant scattering explicitly included. We show the temperature and electron…
We calculate spin relaxation rates in lateral quantum dot systems due to electron exchange between dots and leads. Using rate equations, we develop a theoretical description of the experimentally observed electric current in the spin…
We investigate the spin dynamics of excitons interacting with acoustic phonons in quantum wells, quantum wires and quantum disks by employing a multiband model based on the $4\times4$ Luttinger Hamiltonian. We also use the Bir-Pikus…
Experimental and theoretical studies of all-optical spin pump and probe of resident electrons in CdTe/(Cd,Mg)Te semiconductor quantum wells are reported. A two-color Hanle-MOKE technique (based on continuous-wave excitation) and…
We directly measure the hole spin lifetime in ferromagnetic GaMnAs via time- and polarization-resolved spectroscopy. Below the Curie temperature Tc, an ultrafast photoexcitation with linearly-polarized light is shown to create a…
The time evolution of optically excited carriers in semiconductor quantum wells and quantum dots is analyzed for their interaction with LO-phonons. Both the full two-time Green's function formalism and the one-time approximation provided by…
We investigate the spin dynamics of electrons in quantum wells where the Rashba type of spin-orbit coupling is present in the form of random nanosize domains. We study the effect of magnetic field on the spin relaxation in these systems and…
In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of…
Phonon-induced orbital and spin relaxation rates of single electron states in lateral single and double quantum dots are obtained numerically for realistic materials parameters. The rates are calculated as a function of magnetic field and…
Spin-orbit mediated phonon relaxation in a two-dimensional quantum dot is investigated using different confining potentials. Elliptical harmonic oscillator and cylindrical well results are compared to each other in the case of a…
We have studied the spin dynamics of a dense two-dimensional electron gas confined in a GaAs/AlGaAs triple quantum well by using time-resolved Kerr rotation and resonant spin amplification. Strong anisotropy of the spin relaxation time up…
Hole spins in semiconductor quantum dots can be efficiently manipulated with radio-frequency electric fields owing to the strong spin-orbit interactions in the valence bands. Here we show that the motion of the dot in inhomogeneous strain…
Time-resolved optical measurements in (110)-oriented GaAs/AlGaAs quantum wells show a ten-fold increase of the spin-relaxation rate as a function of applied electric field from 20 to 80 kV cm-1 at 170 K and indicate a similar variation at…
In a two-dimensional quantum dot in a GaAs heterostructure, the spin-orbit scattering rate is substantially reduced below the rate in a bulk two-dimensional electron gas [B.I. Halperin et al, Phys. Rev. Lett. 86, 2106 (2001)]. Such a…
The spin relaxation of a two-dimensional electron system (2DES) formed in a symmetric quantum well is studied theoretically when the quantum well is parallel to the (110) plane of the zinc-blende structure, the spin polarization is…
The gas of interacting excitons in quantum wells is studied. We obtain the Hamiltonian of this gas by the projection of the electron-hole plasma Hamiltonian to exciton states and an expansion in a small density. Matrix elements of the…