Related papers: Surface Passivation of GaAs using Chemical and Pla…
${\beta}$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these…
Atomic hydrogen cleaning followed by heat cleaning at 450$^\circ$C was used to prepare negative-electron-affinity GaAs photocathodes. When hydrogen ions were eliminated, quantum efficiencies of 15% were obtained for bulk GaAs cathodes,…
The impact of the cold radiofrequency air plasma on the surface properties of silicone oils (polydimethylsiloxane) was studied. Silicone oils of various molecular masses were markedly hydrophilized by the cold air plasma treatment. A…
This study demonstrates a substantial enhancement of breakdown voltage in $\beta$-Ga$_2$O$_3$ Schottky diodes through an approach that combines fast neutron irradiation with controlled post-irradiation electro-thermal annealing. Devices…
The effects of different substrates on the off state leakage current in gallium nitride planar diodes are experimentally demonstrated and studied by analyzing temperature-dependent current voltage characteristics.
Understanding and mitigating optical loss is critical to the development of high-performance photonic integrated circuits (PICs). Especially in high refractive index contrast compound semiconductor (III-V) PICs, surface absorption and…
We discuss unreported transitions of oxidized GaAs surfaces between (super)hydrophilic and hydrophobic states when stored in ambient conditions. Contact angles higher than 90deg and high adhesive force were observed for several air-aged…
This work presents the electrostatic analysis of a novel Ga$_2$O$_3$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN…
We report a surface treatment that systematically improves the quality factor of niobium radio frequency cavities beyond the expected limit for niobium. A combination of annealing in a partial pressure of nitrogen or argon gas and…
We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2-D self-consistent simulation of the conduction band profile we show that this…
The adsorption behaviour of hazardous gas molecules, namely nitrogen dioxide (NO$_2$) and ammonia (NH$_3$), on phosphorene nanosheet (PNS) was explored by means of ab initio technique. To improve the structural solidity of pristine PNS, we…
The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation…
Present work was aimed to investigate the effect of nitriding time; 1, 1.5, 2.5 & 3.5 h, on surface characteristics & mechanical properties (surface nano-hardness, hardness Vickers, and adhesion) of AISI M2 tool steel. Mechanically…
For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and high temperature profiles ($>1000^\circ$C). When the maximum…
The efficiency and operating range of a photonic crystal laser is improved by passivating the InGaAs quantum well (QW) gain medium and GaAs membrane using an (NH4)S treatment. The passivated laser shows a four-fold reduction in nonradiative…
Plasma activated water (PAW) offers a sustainable, nonthermal solution for degrading persistent organic pollutants in industrial effluents. This study employed a gliding arc plasma system to generate PAW for treating diluted waste water…
We develop a simple chemical method to obtain bulk quantities of N-doped, reduced graphene oxide (GO) sheets through thermal annealing of GO in ammonia. X-ray photoelectron spectroscopy (XPS) study of GO sheets annealed at various reaction…
This thesis was focused on the surface modification with plasma discharge. Austenitic AISI 316L stainless steel sample was carburised under different experimental conditions and mechanical properties have been studied (thickness, lattice…
Highly Oriented Pyrolytic Graphite was exfoliated via pulsed discharge plasma in liquid nitrogen. The potential mechanisms involved were investigated by observing the treated surface of the graphitic material and the obtained particles.…
A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from…