Photovoltage Effects in Photoemission from Thin GaAs Layers

G. A. Mulhollan; A. V. Subashiev; J. E. Clendenin; E. L. Garwin; R. E. Kirby; T. Maruyama; R. Prepost

doi:10.1016/S0375-9601(01)00202-X

Photovoltage Effects in Photoemission from Thin GaAs Layers

Materials Science 2009-11-07 v1 Accelerator Physics

Authors: G. A. Mulhollan , A. V. Subashiev , J. E. Clendenin , E. L. Garwin , R. E. Kirby , T. Maruyama , R. Prepost

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Abstract

A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from 5\times10^{18} cm^{-3} to 5\times10^{19} cm^{-3} for a set of four samples. The results show that the surface escape probability is a linear function of the NEA energy. The surface photovoltage effect on photoemission is found to diminish to zero at a doping level of 5\times10^{19} cm^{-3}. The experimental results are shown to be in good agreement with calculations using a charge limit model based on surface photovoltage kinetics that assume a constant electron energy relaxation rate in the band bending region.

Keywords

photovoltage effect photoemission GaAs photocathodes surface escape probability charge limit model

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@article{arxiv.cond-mat/0103500,
  title  = {Photovoltage Effects in Photoemission from Thin GaAs Layers},
  author = {G. A. Mulhollan and A. V. Subashiev and J. E. Clendenin and E. L. Garwin and R. E. Kirby and T. Maruyama and R. Prepost},
  journal= {arXiv preprint arXiv:cond-mat/0103500},
  year   = {2009}
}

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Photovoltage Effects in Photoemission from Thin GaAs Layers

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