Enhancement of Photoemission on P-type GaAs using Surface Acoustic Waves

Boqun Dong; Andrei Afanasev; Rolland P. Johnson; Mona E. Zaghloul

Enhancement of Photoemission on P-type GaAs using Surface Acoustic Waves

Applied Physics 2019-03-26 v1 Materials Science Instrumentation and Detectors

Authors: Boqun Dong , Andrei Afanasev , Rolland P. Johnson , Mona E. Zaghloul

Abstract

We demonstrate that photoemission properties of GaAs photocathodes (PCs) can be altered by surface acoustic waves (SAWs) generated on the PC surface due to dynamical piezoelectric fields of SAWs. Simulations with COMSOL indicate that electron effective lifetime in p-doped GaAs may increase by a factor of 10x to 20x. It implies a significant, by a factor of 2x to 3x, increase of quantum efficiency (QE) for GaAs PCs. Essential steps in device fabrication are demonstrated, including deposition of an additional layer of ZnO for piezoelectric effect enhancement, measurements of I-V characteristic of the SAW device, and ability to survive high-temperature annealing.

Keywords

photoemission gaas photocathode surface acoustic wave piezoelectric field quantum efficiency zno device fabrication

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@article{arxiv.1903.10380,
  title  = {Enhancement of Photoemission on P-type GaAs using Surface Acoustic Waves},
  author = {Boqun Dong and Andrei Afanasev and Rolland P. Johnson and Mona E. Zaghloul},
  journal= {arXiv preprint arXiv:1903.10380},
  year   = {2019}
}

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5 pages, 4 figures

Enhancement of Photoemission on P-type GaAs using Surface Acoustic Waves

Abstract

Keywords

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