We report on recent experiments investigating the modification of the inter-band optical response of a piezoelectric semiconductor quantum well structure under the influence of intense short period surface acoustic waves. Experimentally, we study the photoluminescence (PL) of an undoped strained InGaAs/GaAs quantum well on which surface acoustic waves are propagated in the GHz regime. We observe a pronounced influence on the PL, both in intensity as well as in energetic position: Above a critical acoustic power density and corresponding lateral piezoelectric field strength, we observe a quenching of the excitons resulting in a strong decrease of the PL intensity. Using two transducers in a cavity resonator geometry, we can create a standing surface acoustic wave and hence control the nature and efficiency of the acoustic transport of the photoexcited electrons and holes.
@article{arxiv.cond-mat/9609250,
title = {Acousto-optic effects of surface acoustic waves in semiconductor quantum well structures},
author = {C. Rocke and A. Wixforth and J. P. Kotthaus and H. Boehm and G. Weimann},
journal= {arXiv preprint arXiv:cond-mat/9609250},
year = {2008}
}
Comments
4 pages, 3 Figs. included revision necessary due to techical problems