Surface-acoustic-wave-driven luminescence from a lateral p-n junction

J. R. Gell; P. Atkinson; S. P. Bremner; F. Sfigakis; M. Kataoka; D. Anderson; G. A. C. Jones; C. H. W. Barnes; D. A. Ritchie; M. B. Ward; C. E. Norman; A. J. Shields

doi:10.1063/1.2753759

Surface-acoustic-wave-driven luminescence from a lateral p-n junction

Other Condensed Matter 2009-11-13 v1

Authors: J. R. Gell , P. Atkinson , S. P. Bremner , F. Sfigakis , M. Kataoka , D. Anderson , G. A. C. Jones , C. H. W. Barnes , D. A. Ritchie , M. B. Ward , C. E. Norman , A. J. Shields

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Abstract

The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.

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@article{arxiv.cond-mat/0701689,
  title  = {Surface-acoustic-wave-driven luminescence from a lateral p-n junction},
  author = {J. R. Gell and P. Atkinson and S. P. Bremner and F. Sfigakis and M. Kataoka and D. Anderson and G. A. C. Jones and C. H. W. Barnes and D. A. Ritchie and M. B. Ward and C. E. Norman and A. J. Shields},
  journal= {arXiv preprint arXiv:cond-mat/0701689},
  year   = {2009}
}

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4 pages, 3 figures

Surface-acoustic-wave-driven luminescence from a lateral p-n junction

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