Quantized charge pumping through a quantum dot by surface acoustic waves
Mesoscale and Nanoscale Physics
2009-11-10 v1
Abstract
We present a realization of quantized charge pumping. A lateral quantum dot is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface acoustic wave whose wavelength is twice the dot length is used to pump single electrons through the dot at a frequency f=3GHz. The pumped current shows a regular pattern of quantization at values I=nef over a range of gate voltage and wave amplitude settings. The observed values of n, the number of electrons transported per wave cycle, are determined by the number of electronic states in the quantum dot brought into resonance with the fermi level of the electron reservoirs during the pumping cycle.
Cite
@article{arxiv.cond-mat/0312304,
title = {Quantized charge pumping through a quantum dot by surface acoustic waves},
author = {J. Ebbecke and N. E. Fletcher and T. J. B. M. Janssen and F. J. Ahlers and M. Pepper and H. E. Beere and D. A. Ritchie},
journal= {arXiv preprint arXiv:cond-mat/0312304},
year = {2009}
}
Comments
8 pages