Related papers: Shot noise in resonant tunneling through a zero-di…
We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise…
The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a…
We compute the shot noise in ballistic and disordered Fe/MgO/Fe tunnel junctions by a wave function-matching method. For tunnel barriers with no more than 5 atomic layers we find a suppression of the Fano factor as a function of the…
We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as function of bias voltage.…
We report the experimental observation of sub-Poissonian shot noise in single magnetic tunnel junctions, indicating the importance of tunneling via impurity levels inside the tunnel barrier. For junctions with weak zero-bias anomaly in…
We show that shot noise in a resonant tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to ``full'' shot noise. We provide experimental results showing a Fano factor up…
We analyze shot noise in a magnetic tunnel junction with a two-level quantum dot attached to the magnetic electrodes. The considerations are limited to the case when some transport channels are suppressed at low temperatures. Coupling of…
The low-frequency shot noise properties of two electrostatically coupled semiconductor quantum dot states which are connected to emitter/collector contacts are studied. A master equation approach is used to analyze the bias voltage…
We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the anti-parallel configuration is close to unity, it is…
We investigate the transition from sub-Poissonian to super-Poissonian values of the zero-temperature shot noise power of a resonant double barrier of macroscopic cross-section. This transition occurs for driving voltages which are…
We study the noise of the cotunneling current through one or several tunnel-coupled quantum dots in the Coulomb blockade regime. The various regimes of weak and strong, elastic and inelastic cotunneling are analyzed for quantum-dot systems…
We have observed that the shot noise of tunnel current, I, in GaSb-AlSb-InAs-AlSb-GaSb double-barrier structure under a magnetic field can exceed 2qI. The measurements were done at T=4K in fields up to 5T parallel to the current. The noise…
In this paper we report a relaxation-induced suppression of the noise for a single level quantum dot coupled to an oscillator with incoherent dynamics in the sequential tunneling regime. It is shown that relaxation induces qualitative…
In this paper, we carry out a theoretical analysis of the zero-frequency and finite-frequency shot noise in electron tunneling through a two-level interacting system connected to two leads, when a coherent coupling between the two levels is…
We study the behavior of shot noise in resonant tunneling junctions far from equilibrium. Quantum-coherent elastic charge transport can be characterized by a transmission function, that is the probability for an incoming electron at a given…
In this paper, we present theoretical investigation of the zero-frequency shot noise spectra in electron tunneling through an interacting quantum dot connected to two ferromagnetic leads with possibility of spin-flip scattering between the…
We study the influence of inelastic processes on shot noise and the Fano factor for a one-dimensional double-barrier structure, where resonant tunneling takes place between two terminals. Most studies to date have found, by means of various…
We study sequential tunneling through a metallic nanoparticle close to the Stoner instability coupled to parallely magnetized electrodes. Increasing the bias voltage successively opens transport channels associated with excitations of the…
The average current and the shot noise at correlated sequential tunneling via two localized sites are studied. At zero temperature the Fano factor averaged over the positions and energies of sites is shown to be 0.707. The noise dependence…
We have systematically measured the shot noise in a single electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency…